Abstract
BCl 3+ CHF 3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al 0.3 Ga 0.7) 0.5 In 0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V th was achieved. With the merits of this wide bandgap (Al 0.3 Ga 0.7) 0.5 In 0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.
Original language | English |
---|---|
Pages (from-to) | 170-172 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 22 |
Issue number | 4 |
DOIs | |
State | Published - 04 2001 |
Externally published | Yes |
Keywords
- AlGaInP/InGaAs
- Heterostructure FETs
- Reactive-ion-etching