RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma

Shih Cheng Yang*, Hsien Chin Chiu, Feng Tso Chien, Yi Jen Chan, Jenn Ming Kuo

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

6 Scopus citations

Abstract

BCl 3+ CHF 3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al 0.3 Ga 0.7) 0.5 In 0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V th was achieved. With the merits of this wide bandgap (Al 0.3 Ga 0.7) 0.5 In 0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.

Original languageEnglish
Pages (from-to)170-172
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number4
DOIs
StatePublished - 04 2001
Externally publishedYes

Keywords

  • AlGaInP/InGaAs
  • Heterostructure FETs
  • Reactive-ion-etching

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