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RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma

  • Shih Cheng Yang*
  • , Hsien Chin Chiu
  • , Feng Tso Chien
  • , Yi Jen Chan
  • , Jenn Ming Kuo
    • *Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

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