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RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma
Shih Cheng Yang*, Hsien Chin Chiu, Feng Tso Chien, Yi Jen Chan, Jenn Ming Kuo
*Corresponding author for this work
Research output: Contribution to journal › Journal Article › peer-review