Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process

Anirudha Deogaonkar; Mainak Seal; Asim Senapati; Sreekanth Ginnaram; Alok Ranjan; Siddheswar Maikap; Nagarajan Raghavan

doi:10.1016/j.microrel.2022.114765

Robust resistive switching characteristics of AlO_x CBRAM using simple and cost-effective thermal evaporation process

Anirudha Deogaonkar, Mainak Seal, Asim Senapati, Sreekanth Ginnaram, Alok Ranjan, Siddheswar Maikap, Nagarajan Raghavan^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this study, we have reported improved CBRAM device performance using a simple fabrication process consisting of thermal evaporation and metal annealing. The fabricated and annealed Al/Cu/AlO_x/TiN CBRAM shows 600 consecutive DC cycles of switching at 200 μA with a high ON/OFF ratio of >260, P/E endurance of >1.5 × 10⁸ cycles with 100 ns pulse widths and very stable retention life in LRS at 1.2 V and 1.3 V for >4000 s. Annealing enhances AlO_x surface morphology, which results in controlled copper migration, improving the resistive switching properties, especially for the LRS state. Furthermore, the statistical analysis of switching data using the Weibull distribution confirms lower variability for the annealed device due to controlled copper migration.

Original language	English
Article number	114765
Journal	Microelectronics Reliability
Volume	138
DOIs	https://doi.org/10.1016/j.microrel.2022.114765
State	Published - 11 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier Ltd

Keywords

Aluminium oxide
CBRAM
Cluster model
Conducting bridge random access memory
Thermal evaporation
Weibull distribution

Access to Document

10.1016/j.microrel.2022.114765

Cite this

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title = "Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process",

abstract = "In this study, we have reported improved CBRAM device performance using a simple fabrication process consisting of thermal evaporation and metal annealing. The fabricated and annealed Al/Cu/AlOx/TiN CBRAM shows 600 consecutive DC cycles of switching at 200 μA with a high ON/OFF ratio of >260, P/E endurance of >1.5 × 108 cycles with 100 ns pulse widths and very stable retention life in LRS at 1.2 V and 1.3 V for >4000 s. Annealing enhances AlOx surface morphology, which results in controlled copper migration, improving the resistive switching properties, especially for the LRS state. Furthermore, the statistical analysis of switching data using the Weibull distribution confirms lower variability for the annealed device due to controlled copper migration.",

keywords = "Aluminium oxide, CBRAM, Cluster model, Conducting bridge random access memory, Thermal evaporation, Weibull distribution",

author = "Anirudha Deogaonkar and Mainak Seal and Asim Senapati and Sreekanth Ginnaram and Alok Ranjan and Siddheswar Maikap and Nagarajan Raghavan",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

month = nov,

doi = "10.1016/j.microrel.2022.114765",

language = "英语",

volume = "138",

journal = "Microelectronics Reliability",

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T1 - Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process

AU - Deogaonkar, Anirudha

AU - Seal, Mainak

AU - Senapati, Asim

AU - Ginnaram, Sreekanth

AU - Ranjan, Alok

AU - Maikap, Siddheswar

AU - Raghavan, Nagarajan

PY - 2022/11

Y1 - 2022/11

N2 - In this study, we have reported improved CBRAM device performance using a simple fabrication process consisting of thermal evaporation and metal annealing. The fabricated and annealed Al/Cu/AlOx/TiN CBRAM shows 600 consecutive DC cycles of switching at 200 μA with a high ON/OFF ratio of >260, P/E endurance of >1.5 × 108 cycles with 100 ns pulse widths and very stable retention life in LRS at 1.2 V and 1.3 V for >4000 s. Annealing enhances AlOx surface morphology, which results in controlled copper migration, improving the resistive switching properties, especially for the LRS state. Furthermore, the statistical analysis of switching data using the Weibull distribution confirms lower variability for the annealed device due to controlled copper migration.

AB - In this study, we have reported improved CBRAM device performance using a simple fabrication process consisting of thermal evaporation and metal annealing. The fabricated and annealed Al/Cu/AlOx/TiN CBRAM shows 600 consecutive DC cycles of switching at 200 μA with a high ON/OFF ratio of >260, P/E endurance of >1.5 × 108 cycles with 100 ns pulse widths and very stable retention life in LRS at 1.2 V and 1.3 V for >4000 s. Annealing enhances AlOx surface morphology, which results in controlled copper migration, improving the resistive switching properties, especially for the LRS state. Furthermore, the statistical analysis of switching data using the Weibull distribution confirms lower variability for the annealed device due to controlled copper migration.

KW - Aluminium oxide

KW - CBRAM

KW - Cluster model

KW - Conducting bridge random access memory

KW - Thermal evaporation

KW - Weibull distribution

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DO - 10.1016/j.microrel.2022.114765

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