Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application

Sreekanth Ginnaram, Jiantai Timothy Qiu, Siddheswar Maikap*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

33 Scopus citations

Abstract

In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si, the Hf interface device offers consecutive >4000 DC cycles and long program/erase (P/E) endurance of gt; 2\times 10^{9}$ cycles under the low current operation of $100~\mu \text{A}$ at the fast switching speed of 100 ns. The Hf interface device shows gradual RESET, long-term potentiation/depression (LTP/LTD) pulses of 40/100 with small pulse width of 100 ns and a low power consumption of < 13 pJ is needed for artificial synapse applications.

Original languageEnglish
Article number9035621
Pages (from-to)709-712
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number5
DOIs
StatePublished - 05 2020

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

  • CBRAM
  • Hf/Si interfacial layer
  • High-performance
  • MoS₂
  • artificial synapse
  • non-volatile memory

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