Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy

L. B. Chang; L. Z. Shia

doi:10.1063/1.106453

Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy

L. B. Chang^*
, L. Z. Shia

^*Corresponding author for this work

National Defense University Taiwan

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi-insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100-μm-wide and 500-μm long Zn diffused stripe geometry, exhibits a room-temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm ², which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300 μW/facet were also reported.

Original language	English
Pages (from-to)	1090-1092
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	9
DOIs	https://doi.org/10.1063/1.106453
State	Published - 1992
Externally published	Yes

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title = "Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy",

abstract = "Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi-insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100-μm-wide and 500-μm long Zn diffused stripe geometry, exhibits a room-temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm 2, which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300 μW/facet were also reported.",

author = "Chang, \{L. B.\} and Shia, \{L. Z.\}",

year = "1992",

doi = "10.1063/1.106453",

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volume = "60",

pages = "1090--1092",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy

AU - Chang, L. B.

AU - Shia, L. Z.

PY - 1992

Y1 - 1992

N2 - Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi-insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100-μm-wide and 500-μm long Zn diffused stripe geometry, exhibits a room-temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm 2, which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300 μW/facet were also reported.

AB - Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi-insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100-μm-wide and 500-μm long Zn diffused stripe geometry, exhibits a room-temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm 2, which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300 μW/facet were also reported.

UR - https://www.scopus.com/pages/publications/0342746259

U2 - 10.1063/1.106453

DO - 10.1063/1.106453

M3 - 文章

AN - SCOPUS:0342746259

SN - 0003-6951

VL - 60

SP - 1090

EP - 1092

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Room-temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy

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