Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition

Yen Teng Ho; Kuo Shu Chang; Kou Chen Liu; Li Zen Hsieh; Mei Hui Liang

doi:10.1002/crat.201300002

Room temperature epitaxial growth of (001) CeO₂ on (001) LaAlO₃ by pulsed laser deposition

Yen Teng Ho, Kuo Shu Chang, Kou Chen Liu^*, Li Zen Hsieh, Mei Hui Liang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

The room temperature epitaxial growth of CeO₂ on lattice matched (001) LaAlO₃ substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po₂) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO₂ can be achieved at room temperature under Po₂ less than 2 × 10 ^-3 Torr. The best quality of grown film is obtained under Po ₂ = 2 × 10^-5 Torr and degraded under Po₂ = 2 × 10^-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO₂ and LAO is confirmed to be (001)CeO₂ //(001)LAO, [100]_CeO2//[110]_LAO and [010]_CeO2//[1̄10]_LAO. No obvious reduction reaction occurred, from Ce⁺⁴ turned into Ce⁺³ states, as reducing oxygen partial pressure during growth by PLD. The room temperature epitaxial growth of CeO₂ on lattice matched (001) LaAlO₃ substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po₂) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO₂ can be achieved at room temperature under Po₂ less than 2 × 10^-3 Torr. The best quality of grown film is obtained under Po₂ = 2 × 10^-5 Torr and degraded under Po₂ = 2 × 10^-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO₂ and LAO is confirmed to be (001)CeO₂ //(001)LAO, [100] _CeO2//[110]_LAO and [010]_CeO2//[110] _LAO. No obvious reduction reaction occurred, from Ce⁺⁴ turned into Ce⁺³ states, as reducing oxygen partial pressure during growth by PLD.

Original language	English
Pages (from-to)	308-313
Number of pages	6
Journal	Crystal Research and Technology
Volume	48
Issue number	5
DOIs	https://doi.org/10.1002/crat.201300002
State	Published - 05 2013

Keywords

CeO
LAO
PLD
XPS
room temperature epitaxy

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10.1002/crat.201300002

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@article{ad9122ab35ba419094689eec57cb2a00,

title = "Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition",

abstract = "The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po2 less than 2 × 10 -3 Torr. The best quality of grown film is obtained under Po 2 = 2 × 10-5 Torr and degraded under Po2 = 2 × 10-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100]CeO2//[110]LAO and [010]CeO2//[{\=1}10]LAO. No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD. The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po2 less than 2 × 10-3 Torr. The best quality of grown film is obtained under Po2 = 2 × 10-5 Torr and degraded under Po2 = 2 × 10-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100] CeO2//[110]LAO and [010]CeO2//[110] LAO. No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD.",

keywords = "CeO, LAO, PLD, XPS, room temperature epitaxy",

author = "Ho, \{Yen Teng\} and Chang, \{Kuo Shu\} and Liu, \{Kou Chen\} and Hsieh, \{Li Zen\} and Liang, \{Mei Hui\}",

year = "2013",

month = may,

doi = "10.1002/crat.201300002",

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volume = "48",

pages = "308--313",

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publisher = "John Wiley \& Sons Inc.",

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T1 - Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition

AU - Ho, Yen Teng

AU - Chang, Kuo Shu

AU - Liu, Kou Chen

AU - Hsieh, Li Zen

AU - Liang, Mei Hui

PY - 2013/5

Y1 - 2013/5

N2 - The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po2 less than 2 × 10 -3 Torr. The best quality of grown film is obtained under Po 2 = 2 × 10-5 Torr and degraded under Po2 = 2 × 10-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100]CeO2//[110]LAO and [010]CeO2//[1̄10]LAO. No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD. The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po2 less than 2 × 10-3 Torr. The best quality of grown film is obtained under Po2 = 2 × 10-5 Torr and degraded under Po2 = 2 × 10-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100] CeO2//[110]LAO and [010]CeO2//[110] LAO. No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD.

AB - The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po2 less than 2 × 10 -3 Torr. The best quality of grown film is obtained under Po 2 = 2 × 10-5 Torr and degraded under Po2 = 2 × 10-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100]CeO2//[110]LAO and [010]CeO2//[1̄10]LAO. No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD. The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po2 less than 2 × 10-3 Torr. The best quality of grown film is obtained under Po2 = 2 × 10-5 Torr and degraded under Po2 = 2 × 10-6 Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100] CeO2//[110]LAO and [010]CeO2//[110] LAO. No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD.

KW - CeO

KW - LAO

KW - PLD

KW - XPS

KW - room temperature epitaxy

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DO - 10.1002/crat.201300002

M3 - 文章

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JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 5

ER -

Room temperature epitaxial growth of (001) CeO₂ on (001) LaAlO₃ by pulsed laser deposition

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Keywords

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