Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO 2 as gate insulator

Wen Kai Lin, Kou Chen Liu*, Shu Tong Chang, Chi Shiau Li

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

32 Scopus citations

Abstract

We report here the performance of amorphous oxide transparent thin film transistors (TFTs) fabricated using DC magnetron sputter techniques at room temperature. Amorphous indium zinc oxide (a-IZO, In 2O 3:ZnO, 90:10 wt.%) and high dielectric constant hafnium oxide (HfO 2) films were deposited for the semiconducting channel and gate insulator under a mixture of ambient argon and oxygen gas, respectively. The reported transparent TFT structure was a bottom-gate type, consisting of indium-tin-oxide and aluminium as gate electrode and source/drain electrodes, respectively. The optical transmittance of a-IZO films in the visible region was greater than 84%. The a-IZO TFTs showed that the field effect saturation mobility, I on/I off ratio, sub-threshold swing, and threshold voltage were extracted to give 13.09 cm 2/V-s, 4 × 10 5, 0.42 V/decade, and 3.54 V, respectively. The reported a-IZO TFT with high dielectric constant HfO 2 gate dielectric sputtered at room temperature presents high quality characteristics, which can be used as good candidate for the application of low-temperature fabricated optoelectronic devices on organic flexible substrates.

Original languageEnglish
Pages (from-to)3079-3083
Number of pages5
JournalThin Solid Films
Volume520
Issue number7
DOIs
StatePublished - 31 01 2012

Keywords

  • HfO
  • High-κ
  • IZO
  • Oxide semiconductor
  • Room temperature
  • TFT

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