Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy

Ray Ming Lin; Shiang Feng Tang; Si Chen Lee; Chieh Hsiung Kuan; Gin Shiang Chen; Tai Ping Sun; Jyh Chiarng Wu

doi:10.1109/16.557708

Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy

Ray Ming Lin^*, Shiang Feng Tang, Si Chen Lee, Chieh Hsiung Kuan, Gin Shiang Chen, Tai Ping Sun, Jyh Chiarng Wu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

31 Scopus citations

Abstract

An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 ω-cm² at room temperature and as high as 1.3 M ω-cm² at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 × 10¹⁰ cm-Hz^1/2/W at room temperature and 8.1 × 10¹¹ cm-Hz^1/2/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector.

Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	2
DOIs	https://doi.org/10.1109/16.557708
State	Published - 1997
Externally published	Yes

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title = "Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy",

abstract = "An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 ω-cm2 at room temperature and as high as 1.3 M ω-cm2 at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 × 1010 cm-Hz1/2/W at room temperature and 8.1 × 1011 cm-Hz1/2/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector.",

author = "Lin, \{Ray Ming\} and Tang, \{Shiang Feng\} and Lee, \{Si Chen\} and Kuan, \{Chieh Hsiung\} and Chen, \{Gin Shiang\} and Sun, \{Tai Ping\} and Wu, \{Jyh Chiarng\}",

year = "1997",

doi = "10.1109/16.557708",

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volume = "44",

pages = "209--213",

journal = "IEEE Transactions on Electron Devices",

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T1 - Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy

AU - Lin, Ray Ming

AU - Tang, Shiang Feng

AU - Lee, Si Chen

AU - Kuan, Chieh Hsiung

AU - Chen, Gin Shiang

AU - Sun, Tai Ping

AU - Wu, Jyh Chiarng

PY - 1997

Y1 - 1997

N2 - An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 ω-cm2 at room temperature and as high as 1.3 M ω-cm2 at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 × 1010 cm-Hz1/2/W at room temperature and 8.1 × 1011 cm-Hz1/2/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector.

AB - An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 ω-cm2 at room temperature and as high as 1.3 M ω-cm2 at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 × 1010 cm-Hz1/2/W at room temperature and 8.1 × 1011 cm-Hz1/2/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector.

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DO - 10.1109/16.557708

M3 - 文章

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SN - 0018-9383

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EP - 213

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Room temperature unpassivated inas P-I-N photodetectors grown by molecular beam epitaxy

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