Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

D. Jana; S. Maikap; A. Prakash; H. Y. Lee; W. S. Chen; F. T. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/VLSI-TSA.2013.6545585

Rough surface improved formation-free low power resistive switching memory using IrO_x/GdO_x/W structure

D. Jana^*
, S. Maikap
, A. Prakash
, H. Y. Lee
, W. S. Chen
, F. T. Chen
, M. J. Kao
, M. J. Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University
Industrial Technology Research Institute of Taiwan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Promising resistive switching memory characteristics in a IrO _x/GdO_x/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 μA (60μW), long program/erase endurance of >10⁴ cycles, and excellent data retention of >10⁴ s at 85°C.

Original language	English
Title of host publication	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545585
State	Published - 2013
Event	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan Duration: 22 04 2013 → 24 04 2013

Publication series

Name	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Country/Territory	Taiwan
City	Hsinchu
Period	22/04/13 → 24/04/13

Access to Document

10.1109/VLSI-TSA.2013.6545585

Cite this

Jana, D., Maikap, S., Prakash, A., Lee, H. Y., Chen, W. S., Chen, F. T., Kao, M. J., & Tsai, M. J. (2013). Rough surface improved formation-free low power resistive switching memory using IrO_x/GdO_x/W structure. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 Article 6545585 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545585

@inproceedings{ecf9c3ddf5544ea9876babd90925e614,

title = "Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure",

abstract = "Promising resistive switching memory characteristics in a IrO x/GdOx/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 μA (60μW), long program/erase endurance of >104 cycles, and excellent data retention of >104 s at 85°C.",

author = "D. Jana and S. Maikap and A. Prakash and Lee, \{H. Y.\} and Chen, \{W. S.\} and Chen, \{F. T.\} and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2013",

doi = "10.1109/VLSI-TSA.2013.6545585",

language = "英语",

isbn = "9781467330817",

series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

note = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 ; Conference date: 22-04-2013 Through 24-04-2013",

}

Jana, D, Maikap, S, Prakash, A, Lee, HY, Chen, WS, Chen, FT, Kao, MJ & Tsai, MJ 2013, Rough surface improved formation-free low power resistive switching memory using IrO_x/GdO_x/W structure. in 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545585, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, Taiwan, 22/04/13. https://doi.org/10.1109/VLSI-TSA.2013.6545585

Rough surface improved formation-free low power resistive switching memory using IrO_x/GdO_x/W structure. / Jana, D.; Maikap, S.; Prakash, A. et al.
2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545585 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jana, D.

AU - Maikap, S.

AU - Prakash, A.

AU - Lee, H. Y.

AU - Chen, W. S.

AU - Chen, F. T.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2013

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N2 - Promising resistive switching memory characteristics in a IrO x/GdOx/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 μA (60μW), long program/erase endurance of >104 cycles, and excellent data retention of >104 s at 85°C.

AB - Promising resistive switching memory characteristics in a IrO x/GdOx/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 μA (60μW), long program/erase endurance of >104 cycles, and excellent data retention of >104 s at 85°C.

UR - https://www.scopus.com/pages/publications/84881180528

U2 - 10.1109/VLSI-TSA.2013.6545585

DO - 10.1109/VLSI-TSA.2013.6545585

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SN - 9781467330817

T3 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

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T2 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Y2 - 22 April 2013 through 24 April 2013

ER -

Jana D, Maikap S, Prakash A, Lee HY, Chen WS, Chen FT et al. Rough surface improved formation-free low power resistive switching memory using IrO_x/GdO_x/W structure. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545585. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). doi: 10.1109/VLSI-TSA.2013.6545585