Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

Siddheswar Maikap; Asim Senapati

doi:10.1109/SNW50361.2020.9131659

Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

Siddheswar Maikap^*, Asim Senapati

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Here we have reported Ru conducting filament-based novel Ru/Ta2O5/W cross-point resistive switching memory structure for future efficient data-storage application. The device can sustain >103 repeated DC endurance cycles at very low self current compliance (CC) of 100 µA. At low field region HRS current follows the Schottky conduction whereas at high field region HRS current follows the hopping conduction. The device exhibits long program/erase (P/E) cycle endurance of >5 × 108 at very low programming current of 100 µA with very fast pulse width of 100 ns. The initial memory characteristics are very much promising, and the device could be potentially suitable for low power resistive-switching operation.

Original language	English
Title of host publication	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	93-94
Number of pages	2
ISBN (Electronic)	9781728197357
DOIs	https://doi.org/10.1109/SNW50361.2020.9131659
State	Published - 06 2020
Event	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, United States Duration: 13 06 2020 → 14 06 2020

Publication series

Name	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Conference

Conference	2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Country/Territory	United States
City	Honolulu
Period	13/06/20 → 14/06/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

Conducting filament
Cross-points
Resistive switching
Ru

Access to Document

10.1109/SNW50361.2020.9131659

Cite this

Maikap, S., & Senapati, A. (2020). Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation. In 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 (pp. 93-94). Article 9131659 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW50361.2020.9131659

@inproceedings{17cd58a5ec484610940eb6ed6b765187,

title = "Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation",

abstract = "Here we have reported Ru conducting filament-based novel Ru/Ta2O5/W cross-point resistive switching memory structure for future efficient data-storage application. The device can sustain >103 repeated DC endurance cycles at very low self current compliance (CC) of 100 µA. At low field region HRS current follows the Schottky conduction whereas at high field region HRS current follows the hopping conduction. The device exhibits long program/erase (P/E) cycle endurance of >5 × 108 at very low programming current of 100 µA with very fast pulse width of 100 ns. The initial memory characteristics are very much promising, and the device could be potentially suitable for low power resistive-switching operation.",

keywords = "Conducting filament, Cross-points, Resistive switching, Ru",

author = "Siddheswar Maikap and Asim Senapati",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 ; Conference date: 13-06-2020 Through 14-06-2020",

year = "2020",

month = jun,

doi = "10.1109/SNW50361.2020.9131659",

language = "英语",

series = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "93--94",

booktitle = "2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020",

address = "美国",

}

Maikap, S & Senapati, A 2020, Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation. in 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020., 9131659, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Institute of Electrical and Electronics Engineers Inc., pp. 93-94, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020, Honolulu, United States, 13/06/20. https://doi.org/10.1109/SNW50361.2020.9131659

Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation. / Maikap, Siddheswar; Senapati, Asim.
2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 93-94 9131659 (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

AU - Maikap, Siddheswar

AU - Senapati, Asim

PY - 2020/6

Y1 - 2020/6

N2 - Here we have reported Ru conducting filament-based novel Ru/Ta2O5/W cross-point resistive switching memory structure for future efficient data-storage application. The device can sustain >103 repeated DC endurance cycles at very low self current compliance (CC) of 100 µA. At low field region HRS current follows the Schottky conduction whereas at high field region HRS current follows the hopping conduction. The device exhibits long program/erase (P/E) cycle endurance of >5 × 108 at very low programming current of 100 µA with very fast pulse width of 100 ns. The initial memory characteristics are very much promising, and the device could be potentially suitable for low power resistive-switching operation.

AB - Here we have reported Ru conducting filament-based novel Ru/Ta2O5/W cross-point resistive switching memory structure for future efficient data-storage application. The device can sustain >103 repeated DC endurance cycles at very low self current compliance (CC) of 100 µA. At low field region HRS current follows the Schottky conduction whereas at high field region HRS current follows the hopping conduction. The device exhibits long program/erase (P/E) cycle endurance of >5 × 108 at very low programming current of 100 µA with very fast pulse width of 100 ns. The initial memory characteristics are very much promising, and the device could be potentially suitable for low power resistive-switching operation.

KW - Conducting filament

KW - Cross-points

KW - Resistive switching

KW - Ru

UR - http://www.scopus.com/inward/record.url?scp=85092129786&partnerID=8YFLogxK

U2 - 10.1109/SNW50361.2020.9131659

DO - 10.1109/SNW50361.2020.9131659

M3 - 会议稿件

AN - SCOPUS:85092129786

T3 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

SP - 93

EP - 94

BT - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

Y2 - 13 June 2020 through 14 June 2020

ER -

Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

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