Schottky behavior at InN-GaN interface

N. C. Chen; P. H. Chang; Y. N. Wang; H. C. Peng; W. C. Lien; C. F. Shih; Chin An Chang; G. M. Wu

doi:10.1063/1.2132538

Schottky behavior at InN-GaN interface

N. C. Chen^*, P. H. Chang, Y. N. Wang, H. C. Peng, W. C. Lien, C. F. Shih, Chin An Chang, G. M. Wu

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

21 Scopus citations

Abstract

In this work, GaN Schottky diodes were fabricated by depositing InN on GaN surfaces. The junction between these two materials exhibits strong rectifying behavior. The barrier heights were determined to be 1.25 eV, 1.06 eV, and 1.41 eV by current-voltage, current-voltage-temperature, and capacitance-voltage methods, respectively. These values exceed those of any other metalGaN Schottky barriers. Therefore, the conduction-band offset between InN and GaN should not be smaller than the barrier heights obtained here.

Original language	English
Article number	212111
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	21
DOIs	https://doi.org/10.1063/1.2132538
State	Published - 2005

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title = "Schottky behavior at InN-GaN interface",

abstract = "In this work, GaN Schottky diodes were fabricated by depositing InN on GaN surfaces. The junction between these two materials exhibits strong rectifying behavior. The barrier heights were determined to be 1.25 eV, 1.06 eV, and 1.41 eV by current-voltage, current-voltage-temperature, and capacitance-voltage methods, respectively. These values exceed those of any other metalGaN Schottky barriers. Therefore, the conduction-band offset between InN and GaN should not be smaller than the barrier heights obtained here.",

author = "Chen, \{N. C.\} and Chang, \{P. H.\} and Wang, \{Y. N.\} and Peng, \{H. C.\} and Lien, \{W. C.\} and Shih, \{C. F.\} and Chang, \{Chin An\} and Wu, \{G. M.\}",

year = "2005",

doi = "10.1063/1.2132538",

language = "英语",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Schottky behavior at InN-GaN interface

AU - Chen, N. C.

AU - Chang, P. H.

AU - Wang, Y. N.

AU - Peng, H. C.

AU - Lien, W. C.

AU - Shih, C. F.

AU - Chang, Chin An

AU - Wu, G. M.

PY - 2005

Y1 - 2005

N2 - In this work, GaN Schottky diodes were fabricated by depositing InN on GaN surfaces. The junction between these two materials exhibits strong rectifying behavior. The barrier heights were determined to be 1.25 eV, 1.06 eV, and 1.41 eV by current-voltage, current-voltage-temperature, and capacitance-voltage methods, respectively. These values exceed those of any other metalGaN Schottky barriers. Therefore, the conduction-band offset between InN and GaN should not be smaller than the barrier heights obtained here.

AB - In this work, GaN Schottky diodes were fabricated by depositing InN on GaN surfaces. The junction between these two materials exhibits strong rectifying behavior. The barrier heights were determined to be 1.25 eV, 1.06 eV, and 1.41 eV by current-voltage, current-voltage-temperature, and capacitance-voltage methods, respectively. These values exceed those of any other metalGaN Schottky barriers. Therefore, the conduction-band offset between InN and GaN should not be smaller than the barrier heights obtained here.

UR - https://www.scopus.com/pages/publications/27844513507

U2 - 10.1063/1.2132538

DO - 10.1063/1.2132538

M3 - 文章

AN - SCOPUS:27844513507

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212111

ER -

Schottky behavior at InN-GaN interface

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