Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector

G. S. Kar; S. Maikap; A. Dhar; S. K. Ray

doi:10.1117/12.441320

Schottky diode on Si/Si_1-x-yGe_xC_y/Si quantum well heterostructures for long wavelength IR detector

G. S. Kar
, S. Maikap
, A. Dhar
, S. K. Ray

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Si/Si_1-x-yGe_xC_y/Si quantum well heterostructures grown by UH CVD have been characterized in terms of structural and optical properties. The Schottky barrier height (SBH) and ideality factor (n) of PtSi/p-Si_1-x-yGe_xC_y/Si diodes have been investigated using the currentvoltage (I-V) characteristics. The valence band offsets (ΔE_v) of Si/Si_0.795Ge_0.2C_0.005 and Si/ Si_0.79Ge_0.2C_0.01have been extracted using the Schottky diode measurements. A lower value of SBH (φ_b) has been observed in the ternary alloy compared to those in fully strained-Si_1-xGe_x films (with same lattice mismatch to Si) indicating the potential of former for long wavelength IR detection

Original language	English
Pages (from-to)	366-371
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4417
DOIs	https://doi.org/10.1117/12.441320
State	Published - 2001
Externally published	Yes

Keywords

Band offset (ΔE)
IR detector
Schottky barrier height (SBH)
Schottky diode
SiGeC
Single quantum well (SQW)

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10.1117/12.441320

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@article{b0e3e91ac47a41369988120b40dcdf60,

title = "Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector",

abstract = "Si/Si1-x-yGexCy/Si quantum well heterostructures grown by UH CVD have been characterized in terms of structural and optical properties. The Schottky barrier height (SBH) and ideality factor (n) of PtSi/p-Si1-x-yGexCy/Si diodes have been investigated using the currentvoltage (I-V) characteristics. The valence band offsets (ΔEv) of Si/Si0.795Ge0.2C0.005 and Si/ Si0.79Ge0.2C0.01have been extracted using the Schottky diode measurements. A lower value of SBH (φb) has been observed in the ternary alloy compared to those in fully strained-Si1-xGex films (with same lattice mismatch to Si) indicating the potential of former for long wavelength IR detection",

keywords = "Band offset (ΔE), IR detector, Schottky barrier height (SBH), Schottky diode, SiGeC, Single quantum well (SQW)",

author = "Kar, \{G. S.\} and S. Maikap and A. Dhar and Ray, \{S. K.\}",

year = "2001",

doi = "10.1117/12.441320",

language = "英语",

volume = "4417",

pages = "366--371",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Schottky diode on Si/Si1-x-yGexCy/Si quantum well heterostructures for long wavelength IR detector

AU - Kar, G. S.

AU - Maikap, S.

AU - Dhar, A.

AU - Ray, S. K.

PY - 2001

Y1 - 2001

N2 - Si/Si1-x-yGexCy/Si quantum well heterostructures grown by UH CVD have been characterized in terms of structural and optical properties. The Schottky barrier height (SBH) and ideality factor (n) of PtSi/p-Si1-x-yGexCy/Si diodes have been investigated using the currentvoltage (I-V) characteristics. The valence band offsets (ΔEv) of Si/Si0.795Ge0.2C0.005 and Si/ Si0.79Ge0.2C0.01have been extracted using the Schottky diode measurements. A lower value of SBH (φb) has been observed in the ternary alloy compared to those in fully strained-Si1-xGex films (with same lattice mismatch to Si) indicating the potential of former for long wavelength IR detection

AB - Si/Si1-x-yGexCy/Si quantum well heterostructures grown by UH CVD have been characterized in terms of structural and optical properties. The Schottky barrier height (SBH) and ideality factor (n) of PtSi/p-Si1-x-yGexCy/Si diodes have been investigated using the currentvoltage (I-V) characteristics. The valence band offsets (ΔEv) of Si/Si0.795Ge0.2C0.005 and Si/ Si0.79Ge0.2C0.01have been extracted using the Schottky diode measurements. A lower value of SBH (φb) has been observed in the ternary alloy compared to those in fully strained-Si1-xGex films (with same lattice mismatch to Si) indicating the potential of former for long wavelength IR detection

KW - Band offset (ΔE)

KW - IR detector

KW - Schottky barrier height (SBH)

KW - Schottky diode

KW - SiGeC

KW - Single quantum well (SQW)

UR - https://www.scopus.com/pages/publications/0035759833

U2 - 10.1117/12.441320

DO - 10.1117/12.441320

M3 - 文章

AN - SCOPUS:0035759833

SN - 0277-786X

VL - 4417

SP - 366

EP - 371

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Schottky diode on Si/Si_1-x-yGe_xC_y/Si quantum well heterostructures for long wavelength IR detector

Abstract

Keywords

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