Screen-printed Ga2O3 thin film derived from liquid metal employed in highly sensitive pH and non-enzymatic glucose recognition

Munmun Das; Titisha Chakraborty; Chan Yu Lin; Ray Ming Lin; Chyuan Haur Kao

doi:10.1016/j.matchemphys.2021.125652

Screen-printed Ga₂O₃ thin film derived from liquid metal employed in highly sensitive pH and non-enzymatic glucose recognition

Munmun Das, Titisha Chakraborty, Chan Yu Lin, Ray Ming Lin, Chyuan Haur Kao^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

A new scaffold was introduced prefacing a screen-printed native gallium oxide (Ga₂O₃) layer derived from galinstan and pure metallic gallium, employed in Extended Gate Field Effect Transistor (EGFET) along with electrochemical measurement for pH and non-enzymatic glucose detection. Screen-printed Ga₂O₃ from galinstan exhibited a better pH sensitivity (79. 46 mV/pH) with 99% linearity and improved reliability compared to Ga₂O₃ derived from pure gallium. The highly selective Ga₂O₃ (from galistan) based glucose sensor exhibited high sensitivity (22.01 mV/mM) in EGFET and a minimum limit of detection (20 μM) in electrochemical measurement. The commercial applicability of the galinstan-based EGFET glucose sensor was examined by detecting glucose in human serum. Material characterization supported the electrical results. This approach is an innovative state-of-the-art for a stable, inexpensive, and reliable pH and glucose detection method at room temperature.

Original language	English
Article number	125652
Journal	Materials Chemistry and Physics
Volume	278
DOIs	https://doi.org/10.1016/j.matchemphys.2021.125652
State	Published - 15 02 2022

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.

Keywords

EGFET
Electrochemical
GaO
Galinstan
Glucose
Pure gallium
Screen-printed
pH

Access to Document

10.1016/j.matchemphys.2021.125652

Cite this

@article{3e98e5a7614e427781621523c7cac9cd,

title = "Screen-printed Ga2O3 thin film derived from liquid metal employed in highly sensitive pH and non-enzymatic glucose recognition",

abstract = "A new scaffold was introduced prefacing a screen-printed native gallium oxide (Ga2O3) layer derived from galinstan and pure metallic gallium, employed in Extended Gate Field Effect Transistor (EGFET) along with electrochemical measurement for pH and non-enzymatic glucose detection. Screen-printed Ga2O3 from galinstan exhibited a better pH sensitivity (79. 46 mV/pH) with 99% linearity and improved reliability compared to Ga2O3 derived from pure gallium. The highly selective Ga2O3 (from galistan) based glucose sensor exhibited high sensitivity (22.01 mV/mM) in EGFET and a minimum limit of detection (20 μM) in electrochemical measurement. The commercial applicability of the galinstan-based EGFET glucose sensor was examined by detecting glucose in human serum. Material characterization supported the electrical results. This approach is an innovative state-of-the-art for a stable, inexpensive, and reliable pH and glucose detection method at room temperature.",

keywords = "EGFET, Electrochemical, GaO, Galinstan, Glucose, Pure gallium, Screen-printed, pH",

author = "Munmun Das and Titisha Chakraborty and Lin, {Chan Yu} and Lin, {Ray Ming} and Kao, {Chyuan Haur}",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2022",

month = feb,

day = "15",

doi = "10.1016/j.matchemphys.2021.125652",

language = "英语",

volume = "278",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Screen-printed Ga2O3 thin film derived from liquid metal employed in highly sensitive pH and non-enzymatic glucose recognition

AU - Das, Munmun

AU - Chakraborty, Titisha

AU - Lin, Chan Yu

AU - Lin, Ray Ming

AU - Kao, Chyuan Haur

PY - 2022/2/15

Y1 - 2022/2/15

N2 - A new scaffold was introduced prefacing a screen-printed native gallium oxide (Ga2O3) layer derived from galinstan and pure metallic gallium, employed in Extended Gate Field Effect Transistor (EGFET) along with electrochemical measurement for pH and non-enzymatic glucose detection. Screen-printed Ga2O3 from galinstan exhibited a better pH sensitivity (79. 46 mV/pH) with 99% linearity and improved reliability compared to Ga2O3 derived from pure gallium. The highly selective Ga2O3 (from galistan) based glucose sensor exhibited high sensitivity (22.01 mV/mM) in EGFET and a minimum limit of detection (20 μM) in electrochemical measurement. The commercial applicability of the galinstan-based EGFET glucose sensor was examined by detecting glucose in human serum. Material characterization supported the electrical results. This approach is an innovative state-of-the-art for a stable, inexpensive, and reliable pH and glucose detection method at room temperature.

AB - A new scaffold was introduced prefacing a screen-printed native gallium oxide (Ga2O3) layer derived from galinstan and pure metallic gallium, employed in Extended Gate Field Effect Transistor (EGFET) along with electrochemical measurement for pH and non-enzymatic glucose detection. Screen-printed Ga2O3 from galinstan exhibited a better pH sensitivity (79. 46 mV/pH) with 99% linearity and improved reliability compared to Ga2O3 derived from pure gallium. The highly selective Ga2O3 (from galistan) based glucose sensor exhibited high sensitivity (22.01 mV/mM) in EGFET and a minimum limit of detection (20 μM) in electrochemical measurement. The commercial applicability of the galinstan-based EGFET glucose sensor was examined by detecting glucose in human serum. Material characterization supported the electrical results. This approach is an innovative state-of-the-art for a stable, inexpensive, and reliable pH and glucose detection method at room temperature.

KW - EGFET

KW - Electrochemical

KW - GaO

KW - Galinstan

KW - Glucose

KW - Pure gallium

KW - Screen-printed

KW - pH

UR - http://www.scopus.com/inward/record.url?scp=85121800900&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2021.125652

DO - 10.1016/j.matchemphys.2021.125652

M3 - 文章

AN - SCOPUS:85121800900

SN - 0254-0584

VL - 278

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

M1 - 125652

ER -