Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

Nien Tze Yeh; Jia Ming Lee; Tzer En Nee; Jen Inn Chyi

doi:10.1109/68.874209

Self-assembled In_0.5Ga_0.5As quantum-dot lasers with doped active region

Nien Tze Yeh, Jia Ming Lee, Tzer En Nee, Jen Inn Chyi

National Central University

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

Self-assembled In_0.5Ga_0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In_0.5Ga_0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.

Original language	English
Pages (from-to)	1123-1125
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1109/68.874209
State	Published - 09 2000
Externally published	Yes

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@article{5127d44a01a54262ad101c4956c93846,

title = "Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region",

abstract = "Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.",

author = "Yeh, {Nien Tze} and Lee, {Jia Ming} and Nee, {Tzer En} and Chyi, {Jen Inn}",

year = "2000",

month = sep,

doi = "10.1109/68.874209",

language = "英语",

volume = "12",

pages = "1123--1125",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

AU - Yeh, Nien Tze

AU - Lee, Jia Ming

AU - Nee, Tzer En

AU - Chyi, Jen Inn

PY - 2000/9

Y1 - 2000/9

N2 - Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.

AB - Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0034266502&partnerID=8YFLogxK

U2 - 10.1109/68.874209

DO - 10.1109/68.874209

M3 - 文章

AN - SCOPUS:0034266502

SN - 1041-1135

VL - 12

SP - 1123

EP - 1125

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 9

ER -

Self-assembled In_0.5Ga_0.5As quantum-dot lasers with doped active region

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