Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

Pi Chun Juan; Jyh Liang Wang; Tsang Yen Hsieh; Cheng Li Lin; Chia Ming Yang; Der Chi Shye; Shu Chuan Liao

doi:10.1016/j.mee.2015.01.026

Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

Pi Chun Juan^*, Jyh Liang Wang, Tsang Yen Hsieh, Cheng Li Lin, Chia Ming Yang, Der Chi Shye, Shu Chuan Liao

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.

Original language	English
Pages (from-to)	27-30
Number of pages	4
Journal	Microelectronic Engineering
Volume	138
DOIs	https://doi.org/10.1016/j.mee.2015.01.026
State	Published - 20 04 2015

Bibliographical note

Publisher Copyright:
© 2015 Published by Elsevier Inc.

Keywords

Nanocrystal
Nonvolatile memory
ZrLaO high-κ

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10.1016/j.mee.2015.01.026

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title = "Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories",

abstract = "TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.",

keywords = "Nanocrystal, Nonvolatile memory, ZrLaO high-κ",

author = "Juan, \{Pi Chun\} and Wang, \{Jyh Liang\} and Hsieh, \{Tsang Yen\} and Lin, \{Cheng Li\} and Yang, \{Chia Ming\} and Shye, \{Der Chi\} and Liao, \{Shu Chuan\}",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier Inc.",

year = "2015",

month = apr,

day = "20",

doi = "10.1016/j.mee.2015.01.026",

language = "英语",

volume = "138",

pages = "27--30",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

AU - Juan, Pi Chun

AU - Wang, Jyh Liang

AU - Hsieh, Tsang Yen

AU - Lin, Cheng Li

AU - Yang, Chia Ming

AU - Shye, Der Chi

AU - Liao, Shu Chuan

PY - 2015/4/20

Y1 - 2015/4/20

N2 - TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.

AB - TiN/ZrN/high-κ (ZrLaO)/Si (MIS) structures were fabricated. Localized La-rich oxide behaving like nanocrystal (NC) has been self-formed between ZrN cap and TiN gate metal after 850 °C annealing. The program speed of 1 μs was achieved with capacitance ratio >3. The large C-V memory window of 2 V was observed at swept voltage of ±4 V. TEM analysis shows two discrete regions (NC and metal cap), which leads to two levels of speed sensitive. The endurance properties show small degradation in flatband voltage shift after 10sup6/sup cycles. The relative dielectric constant is 11.1 and equivalent oxide thickness is 7.8 nm.

KW - Nanocrystal

KW - Nonvolatile memory

KW - ZrLaO high-κ

UR - https://www.scopus.com/pages/publications/84922442251

U2 - 10.1016/j.mee.2015.01.026

DO - 10.1016/j.mee.2015.01.026

M3 - 文章

AN - SCOPUS:84922442251

SN - 0167-9317

VL - 138

SP - 27

EP - 30

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

Abstract

Bibliographical note

Keywords

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