Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory

Amit Prakash, Debanjan Jana, Subhranu Samanta, Siddheswar Maikap*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

27 Scopus citations

Abstract

Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaOx/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and morphology of the stack. The device has shown excellent switching cycle uniformity with a small operation of ±2.5 V and a resistance ratio of >100. The device requires neither any frorming-process nor current compliance limit for repeatable operation in contrast to conventional resistive random access memory devices. The effect of bottom electrode morphology and surface roughness is also studied. The improvement is due to the enhanced electric field at the nanotips in the bottom electrode and the defective TaOx switching layer which enable controlled filament formation/rupture. The device area dependence of the low resistance state indicates multifilament formation. The device has shown a robust alternating current endurance of >105 cycles and a data retention of >104 s.

Original languageEnglish
Article number527
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 2013

Keywords

  • Cross-point
  • RRAM
  • Self-compliance

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