Self-compliance-improved resistive switching using Ir/TaO_x/W cross-point memory

Engineering

• Cycles 100%
• Random Access Memory Device 100%
• Resistive 100%
• Switching 100%
• Resistive Random Access Memory 100%
• Cross Point 100%
• Point Memory 100%
• Properties 50%
• Surfaces 50%
• Roughness 50%
• Electric Field 50%
• Transmissions 50%
• Data Retention 50%
• Atomic Force Microscope 50%
• Low Resistance 50%
• Architecture 50%
• Alternating Current 50%
• Resistance Ratio 50%
• Film Property 50%
• Compliance Limit 50%

Material Science

• Devices 100%
• Electrode 33%
• Morphology 33%
• Resistive Random-Access Memory 33%
• Durability 16%
• Film 16%
• Surface Roughness 16%