Sensing Performance of Stable TiN Extended-Gate Field-Effect Transistor pH Sensors in a Wide Short Annealing Temperature Range

Chih Wei Wang, Tung Ming Pan*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

10 Scopus citations

Abstract

In this letter, the structural properties and sensing performances of TiN sensing films deposited on a n+-type Si through the reactive DC sputtering method with rapid thermal annealing at a wide temperature range of 200 °C to 800 °C were investigated for extended-gate field-effect transistor (EGFET) pH sensors. We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to study the structural characteristics of these films. These TiN EGFET sensors exhibited almost the same sensing performances, such as pH sensitivity 58 mV/pH), hysteresis voltage 2 mV), and drift rate (0.45 mV/h), indicating that they contained similar or identical in the film composition and surface roughness.

Original languageEnglish
Article number8970534
Pages (from-to)489-492
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number3
DOIs
StatePublished - 03 2020

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

  • Extended-gate field-effect transistor (EGFET)
  • TiN sensing film
  • pH sensor

Fingerprint

Dive into the research topics of 'Sensing Performance of Stable TiN Extended-Gate Field-Effect Transistor pH Sensors in a Wide Short Annealing Temperature Range'. Together they form a unique fingerprint.

Cite this