Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal-oxide semiconductor field-effect transistors

G. S. Kar*, S. Maikap, S. K. Banerjee, S. K. Ray

*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

15 Scopus citations

Fingerprint

Dive into the research topics of 'Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal-oxide semiconductor field-effect transistors'. Together they form a unique fingerprint.

Engineering

Material Science