Si - H bond breaking induced retention degradation during packaging process of 256 Mbit DRAMs with negative wordline bias
- Minchen Chang*
- , Jengping Lin
- , Chao Sung Lai
- , Ruey Dar Chang
- , Steven N. Shih
- , Mao Ying Wang
- , Pei Ing Lee
*Corresponding author for this work
- Chang Gung University
- Nanya Technology Corporation
Research output: Contribution to journal › Journal Article › peer-review
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Scopus
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