@inproceedings{6dd9070764e4437b86facaae82c365f4,
title = "Si IC development for high efficiency envelope tracking power amplifiers",
abstract = "Envelope tracking provides the potential for achieving high efficiency in power amplifiers for next generation wireless systems with high peak-to-average ratio signals such as LTE. Envelope modulators with low cost, high efficiency and wide bandwidth are critical enablers for the widespread application of ET. This presentation reviews the development of various Si ICs for ET applications in basestation PAs and in handset PAs. Requirements of voltage swing, bandwidth, and accuracy are first described. BCD technology-based Si ICs for envelope modulators achieving voltages as high as 50V are presented, for operation in basestations with LDMOS and GaN RF power transistors. CMOS-based Si envelope modulator ICs for operation in wireless handsets are also discussed. ET amplifiers that achieve overall efficiency as high as 45% in 20MHz LTE handset applications are presented.",
keywords = "CMOS integrated circuits, Envelope tracking, power amplifiers",
author = "P. Asbeck and L. Larson and D. Kimball and M. Kwak and M. Hassan and C. Hsia and C. Presti and A. Scuderi",
year = "2012",
doi = "10.1109/SiRF.2012.6160168",
language = "英语",
isbn = "9781457713163",
series = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers",
pages = "1--4",
booktitle = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers",
note = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 ; Conference date: 16-01-2012 Through 18-01-2012",
}