Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee; Chang Da Tsai; Chi Yu Wang; Hung Pin Shiao; Tzer En Nee; Jia Nan Shen

doi:10.1063/1.115073

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Ching Ting Lee^*, Chang Da Tsai, Chi Yu Wang, Hung Pin Shiao, Tzer En Nee, Jia Nan Shen

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

Original language	English
Pages (from-to)	2046
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115073
State	Published - 1995
Externally published	Yes

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@article{7d80b8a2f92043f88e78ecd9a9b538c1,

title = "Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure",

abstract = "The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.",

author = "Lee, \{Ching Ting\} and Tsai, \{Chang Da\} and Wang, \{Chi Yu\} and Shiao, \{Hung Pin\} and Nee, \{Tzer En\} and Shen, \{Jia Nan\}",

year = "1995",

doi = "10.1063/1.115073",

language = "英语",

volume = "67",

pages = "2046",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

AU - Lee, Ching Ting

AU - Tsai, Chang Da

AU - Wang, Chi Yu

AU - Shiao, Hung Pin

AU - Nee, Tzer En

AU - Shen, Jia Nan

PY - 1995

Y1 - 1995

N2 - The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

AB - The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device.

UR - https://www.scopus.com/pages/publications/0012214561

U2 - 10.1063/1.115073

DO - 10.1063/1.115073

M3 - 文章

AN - SCOPUS:0012214561

SN - 0003-6951

VL - 67

SP - 2046

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Sidegating effect improvement of GaAs metal-semiconductor field effect transistor by multiquantum barrier structure

Abstract

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