Silicide formation of Au thin films on (1 0 0) Si during annealing

J. F. Chang; T. F. Young; Y. L. Yang; H. Y. Ueng; T. C. Chang

doi:10.1016/S0254-0584(03)00240-2

Silicide formation of Au thin films on (1 0 0) Si during annealing

J. F. Chang, T. F. Young^*, Y. L. Yang, H. Y. Ueng, T. C. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

58 Scopus citations

Abstract

The formation of gold silicide in gold thin films deposited on Si has been studied by in situ X-ray diffraction (XRD) analysis during annealing up to 500°C. In addition, samples are prepared by rapid thermal annealing at 200°C for 10, 20, and 40min, and analyzed by ex situ grazing angle XRD, before and after annealing. The morphology is characterized by atomic force microscopy (AFM). The in situ XRD result shows that silicide has already been formed after the deposition of gold on silicon at room temperature. AFM micrographs reveal that silicon and gold are consumed through reacting near gold cluster interface and then silicide diffuses out and agglomerates to clusters again. The grazing angle XRD analysis shows also the evidence of phase transformation of gold silicide after annealing at 200°C from 20 to 40 min. These results are in good agreement with proposed kinetic model of silicide formation, in which silicon reacts with gold to form gold silicide and diffuses out along the silicon surface.

Original language	English
Pages (from-to)	199-203
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	83
Issue number	2-3
DOIs	https://doi.org/10.1016/S0254-0584(03)00240-2
State	Published - 15 02 2004
Externally published	Yes

Keywords

Grazing angle X-ray diffraction
In situ X-ray diffraction
Silicide formation
Surface diffusion

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10.1016/S0254-0584(03)00240-2

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@article{c8ba168455074f37a12cfc19c51e7e3c,

title = "Silicide formation of Au thin films on (1 0 0) Si during annealing",

abstract = "The formation of gold silicide in gold thin films deposited on Si has been studied by in situ X-ray diffraction (XRD) analysis during annealing up to 500°C. In addition, samples are prepared by rapid thermal annealing at 200°C for 10, 20, and 40min, and analyzed by ex situ grazing angle XRD, before and after annealing. The morphology is characterized by atomic force microscopy (AFM). The in situ XRD result shows that silicide has already been formed after the deposition of gold on silicon at room temperature. AFM micrographs reveal that silicon and gold are consumed through reacting near gold cluster interface and then silicide diffuses out and agglomerates to clusters again. The grazing angle XRD analysis shows also the evidence of phase transformation of gold silicide after annealing at 200°C from 20 to 40 min. These results are in good agreement with proposed kinetic model of silicide formation, in which silicon reacts with gold to form gold silicide and diffuses out along the silicon surface.",

keywords = "Grazing angle X-ray diffraction, In situ X-ray diffraction, Silicide formation, Surface diffusion",

author = "Chang, {J. F.} and Young, {T. F.} and Yang, {Y. L.} and Ueng, {H. Y.} and Chang, {T. C.}",

year = "2004",

month = feb,

day = "15",

doi = "10.1016/S0254-0584(03)00240-2",

language = "英语",

volume = "83",

pages = "199--203",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Silicide formation of Au thin films on (1 0 0) Si during annealing

AU - Chang, J. F.

AU - Young, T. F.

AU - Yang, Y. L.

AU - Ueng, H. Y.

AU - Chang, T. C.

PY - 2004/2/15

Y1 - 2004/2/15

N2 - The formation of gold silicide in gold thin films deposited on Si has been studied by in situ X-ray diffraction (XRD) analysis during annealing up to 500°C. In addition, samples are prepared by rapid thermal annealing at 200°C for 10, 20, and 40min, and analyzed by ex situ grazing angle XRD, before and after annealing. The morphology is characterized by atomic force microscopy (AFM). The in situ XRD result shows that silicide has already been formed after the deposition of gold on silicon at room temperature. AFM micrographs reveal that silicon and gold are consumed through reacting near gold cluster interface and then silicide diffuses out and agglomerates to clusters again. The grazing angle XRD analysis shows also the evidence of phase transformation of gold silicide after annealing at 200°C from 20 to 40 min. These results are in good agreement with proposed kinetic model of silicide formation, in which silicon reacts with gold to form gold silicide and diffuses out along the silicon surface.

AB - The formation of gold silicide in gold thin films deposited on Si has been studied by in situ X-ray diffraction (XRD) analysis during annealing up to 500°C. In addition, samples are prepared by rapid thermal annealing at 200°C for 10, 20, and 40min, and analyzed by ex situ grazing angle XRD, before and after annealing. The morphology is characterized by atomic force microscopy (AFM). The in situ XRD result shows that silicide has already been formed after the deposition of gold on silicon at room temperature. AFM micrographs reveal that silicon and gold are consumed through reacting near gold cluster interface and then silicide diffuses out and agglomerates to clusters again. The grazing angle XRD analysis shows also the evidence of phase transformation of gold silicide after annealing at 200°C from 20 to 40 min. These results are in good agreement with proposed kinetic model of silicide formation, in which silicon reacts with gold to form gold silicide and diffuses out along the silicon surface.

KW - Grazing angle X-ray diffraction

KW - In situ X-ray diffraction

KW - Silicide formation

KW - Surface diffusion

UR - http://www.scopus.com/inward/record.url?scp=0346910228&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(03)00240-2

DO - 10.1016/S0254-0584(03)00240-2

M3 - 文章

AN - SCOPUS:0346910228

SN - 0254-0584

VL - 83

SP - 199

EP - 203

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Silicide formation of Au thin films on (1 0 0) Si during annealing

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Keywords

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