Silicon-oxide-nitride-oxide-silicon-type flash memory with a high- k NdTi O3 charge trapping layer

In this letter, we demonstrate the silicon-oxide-nitride-oxide-silicon-type flash memory using a high- k NdTi O3 charge trapping layer. The structural and electrical properties of a high- k NdTi O3 memory were explored by x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage curves, and data retention. We found that the NdTi O3 charge trapping layer annealed at 800 °C exhibited a large flatband voltage shift of 2.8 V (programed at Vg =9 V under 1 ms) and a low charge loss of 3% (measured at room temperature) due to the higher probability of trapping the charge carriers, and they are trapped in the deep trap level of NdTi O3, indicative of the formation of a well-crystallized NdTi O3 structure and the reduction of the interfacial layer.