Silver cofirable Bi1.5Zn0.92Nb1.5O6.92 microwave ceramics containing CuO-based dopants

M. C. Wu; Y. C. Huang; W. F. Su

doi:10.1016/j.matchemphys.2006.01.034

Silver cofirable Bi_1.5Zn_0.92Nb_1.5O_6.92 microwave ceramics containing CuO-based dopants

M. C. Wu, Y. C. Huang, W. F. Su^*

^*Corresponding author for this work

National Taiwan University

Research output: Contribution to journal › Journal Article › peer-review

26 Scopus citations

Abstract

Bi₂O₃-ZnO-Nb₂O₅ system has emerged as a good low sintering (∼1050 °C) microwave material because it exhibits high dielectric constant and low temperature coefficient of resonance frequency (τ_f). We have lowered the sintering temperature of Bi_1.5Zn_0.92Nb_1.5O_6.92 (BZN) below 900 °C by using 3 wt.% of CuO-based dopants, such as 0.21BaCO₃-0.79CuO (BC) and 0.81MoO₃-0.19CuO (MC). The doped BZN exhibits high microwave dielectric constant at 2.3 GHz (k ∼ 120). The interfacial behavior between BZN and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. The extent of silver migration of MC and BC dopants is reduced at least by one order of magnitude as compared with V₂O₅ dopant when the samples was prepared at 900 °C for 4 h. Thus, CuO-based dopants can replace V₂O₅ to lower the sintering temperature of BZN and to be cofired with silver.

Original language	English
Pages (from-to)	391-394
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	100
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2006.01.034
State	Published - 10 12 2006
Externally published	Yes

Keywords

BiZnNbO
Cofired
Low sintering temperature
Microwave dielectric property
Silver migration

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10.1016/j.matchemphys.2006.01.034

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@article{ba97a1e690d44df6aa2840f15b95e245,

title = "Silver cofirable Bi1.5Zn0.92Nb1.5O6.92 microwave ceramics containing CuO-based dopants",

abstract = "Bi2O3-ZnO-Nb2O5 system has emerged as a good low sintering (∼1050 °C) microwave material because it exhibits high dielectric constant and low temperature coefficient of resonance frequency (τf). We have lowered the sintering temperature of Bi1.5Zn0.92Nb1.5O6.92 (BZN) below 900 °C by using 3 wt.% of CuO-based dopants, such as 0.21BaCO3-0.79CuO (BC) and 0.81MoO3-0.19CuO (MC). The doped BZN exhibits high microwave dielectric constant at 2.3 GHz (k ∼ 120). The interfacial behavior between BZN and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. The extent of silver migration of MC and BC dopants is reduced at least by one order of magnitude as compared with V2O5 dopant when the samples was prepared at 900 °C for 4 h. Thus, CuO-based dopants can replace V2O5 to lower the sintering temperature of BZN and to be cofired with silver.",

keywords = "BiZnNbO, Cofired, Low sintering temperature, Microwave dielectric property, Silver migration",

author = "Wu, {M. C.} and Huang, {Y. C.} and Su, {W. F.}",

year = "2006",

month = dec,

day = "10",

doi = "10.1016/j.matchemphys.2006.01.034",

language = "英语",

volume = "100",

pages = "391--394",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Silver cofirable Bi1.5Zn0.92Nb1.5O6.92 microwave ceramics containing CuO-based dopants

AU - Wu, M. C.

AU - Huang, Y. C.

AU - Su, W. F.

PY - 2006/12/10

Y1 - 2006/12/10

N2 - Bi2O3-ZnO-Nb2O5 system has emerged as a good low sintering (∼1050 °C) microwave material because it exhibits high dielectric constant and low temperature coefficient of resonance frequency (τf). We have lowered the sintering temperature of Bi1.5Zn0.92Nb1.5O6.92 (BZN) below 900 °C by using 3 wt.% of CuO-based dopants, such as 0.21BaCO3-0.79CuO (BC) and 0.81MoO3-0.19CuO (MC). The doped BZN exhibits high microwave dielectric constant at 2.3 GHz (k ∼ 120). The interfacial behavior between BZN and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. The extent of silver migration of MC and BC dopants is reduced at least by one order of magnitude as compared with V2O5 dopant when the samples was prepared at 900 °C for 4 h. Thus, CuO-based dopants can replace V2O5 to lower the sintering temperature of BZN and to be cofired with silver.

AB - Bi2O3-ZnO-Nb2O5 system has emerged as a good low sintering (∼1050 °C) microwave material because it exhibits high dielectric constant and low temperature coefficient of resonance frequency (τf). We have lowered the sintering temperature of Bi1.5Zn0.92Nb1.5O6.92 (BZN) below 900 °C by using 3 wt.% of CuO-based dopants, such as 0.21BaCO3-0.79CuO (BC) and 0.81MoO3-0.19CuO (MC). The doped BZN exhibits high microwave dielectric constant at 2.3 GHz (k ∼ 120). The interfacial behavior between BZN and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. The extent of silver migration of MC and BC dopants is reduced at least by one order of magnitude as compared with V2O5 dopant when the samples was prepared at 900 °C for 4 h. Thus, CuO-based dopants can replace V2O5 to lower the sintering temperature of BZN and to be cofired with silver.

KW - BiZnNbO

KW - Cofired

KW - Low sintering temperature

KW - Microwave dielectric property

KW - Silver migration

UR - http://www.scopus.com/inward/record.url?scp=33750076390&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2006.01.034

DO - 10.1016/j.matchemphys.2006.01.034

M3 - 文章

AN - SCOPUS:33750076390

SN - 0254-0584

VL - 100

SP - 391

EP - 394

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Silver cofirable Bi_1.5Zn_0.92Nb_1.5O_6.92 microwave ceramics containing CuO-based dopants

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Keywords

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