TY - JOUR
T1 - Simple analytical model for short-channel MOS devices
AU - Chow, H. C.
AU - Feng, W. S.
AU - Kuo, J. B.
PY - 1992
Y1 - 1992
N2 - A simple analytical model derived from a quasi-two-dimensional analysis with a non-vanishing E-field derivative at the pinchoff point and a continuous output conductance at the transition point for short-channel MOSFETs is presented. This model also covers mobility reduction, carrier velocity saturation, body, channel-length modulation, source-drain series resistance and short-channel effects for an accurate determination of the pinchoff point location without internal numerical iterations as compared to other models. This model can be used to describe the channel-length modulation effects more accurately in circuit simulation with short-channel MOSFETs.
AB - A simple analytical model derived from a quasi-two-dimensional analysis with a non-vanishing E-field derivative at the pinchoff point and a continuous output conductance at the transition point for short-channel MOSFETs is presented. This model also covers mobility reduction, carrier velocity saturation, body, channel-length modulation, source-drain series resistance and short-channel effects for an accurate determination of the pinchoff point location without internal numerical iterations as compared to other models. This model can be used to describe the channel-length modulation effects more accurately in circuit simulation with short-channel MOSFETs.
UR - http://www.scopus.com/inward/record.url?scp=0026882551&partnerID=8YFLogxK
U2 - 10.1049/ip-g-2.1992.0065
DO - 10.1049/ip-g-2.1992.0065
M3 - 文章
AN - SCOPUS:0026882551
SN - 0956-3768
VL - 139
SP - 405
EP - 409
JO - IEE Proceedings, Part G: Circuits, Devices and Systems
JF - IEE Proceedings, Part G: Circuits, Devices and Systems
IS - 3
ER -