Simulation Study of Implantation Angle Variation and Its Impact on Device Performance

Ruey Dar Chang; Po Heng Lin

doi:10.1109/IIT.2016.7882906

Simulation Study of Implantation Angle Variation and Its Impact on Device Performance

Ruey Dar Chang, Po Heng Lin

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A simulation platform was established to evaluate device performance affected by ion implantation angle variation. Modeling of a one-dimensional wafer scanning system was performed to estimate the angle variation. Process simulation for fin field effect transistors (FinFET) revealed that twist angle affects dopant dose retention in the fin structure. However, the fin structure twists as the arm holding the wafer rotates during scanning. This causes twist angle variation which depends on the length of the rotation arm and the tilt angle. Maximum variation in twist angle occurs near the bottom edge of the wafer. Such variation may increase device driving and leakage current when more twist angle results in more dopant retention in the source/drain extension regions.

Original language	English
Title of host publication	2016 21st International Conference on Ion Implantation Technology, IIT 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509020232
DOIs	https://doi.org/10.1109/IIT.2016.7882906
State	Published - 20 03 2017
Event	21st International Conference on Ion Implantation Technology, IIT 2016 - Tainan, Taiwan Duration: 26 09 2016 → 30 09 2016

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology

Conference

Conference	21st International Conference on Ion Implantation Technology, IIT 2016
Country/Territory	Taiwan
City	Tainan
Period	26/09/16 → 30/09/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

FinFET
implantation
twist angle
variation
wafer scan

Access to Document

10.1109/IIT.2016.7882906

Cite this

Chang, R. D., & Lin, P. H. (2017). Simulation Study of Implantation Angle Variation and Its Impact on Device Performance. In 2016 21st International Conference on Ion Implantation Technology, IIT 2016 Article 7882906 (Proceedings of the International Conference on Ion Implantation Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2016.7882906

@inproceedings{f4aca554ec1141d59969a0c38faa13c7,

title = "Simulation Study of Implantation Angle Variation and Its Impact on Device Performance",

abstract = "A simulation platform was established to evaluate device performance affected by ion implantation angle variation. Modeling of a one-dimensional wafer scanning system was performed to estimate the angle variation. Process simulation for fin field effect transistors (FinFET) revealed that twist angle affects dopant dose retention in the fin structure. However, the fin structure twists as the arm holding the wafer rotates during scanning. This causes twist angle variation which depends on the length of the rotation arm and the tilt angle. Maximum variation in twist angle occurs near the bottom edge of the wafer. Such variation may increase device driving and leakage current when more twist angle results in more dopant retention in the source/drain extension regions.",

keywords = "FinFET, implantation, twist angle, variation, wafer scan",

author = "Chang, {Ruey Dar} and Lin, {Po Heng}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 21st International Conference on Ion Implantation Technology, IIT 2016 ; Conference date: 26-09-2016 Through 30-09-2016",

year = "2017",

month = mar,

day = "20",

doi = "10.1109/IIT.2016.7882906",

language = "英语",

series = "Proceedings of the International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 21st International Conference on Ion Implantation Technology, IIT 2016",

address = "美国",

}

Chang, RD & Lin, PH 2017, Simulation Study of Implantation Angle Variation and Its Impact on Device Performance. in 2016 21st International Conference on Ion Implantation Technology, IIT 2016., 7882906, Proceedings of the International Conference on Ion Implantation Technology, Institute of Electrical and Electronics Engineers Inc., 21st International Conference on Ion Implantation Technology, IIT 2016, Tainan, Taiwan, 26/09/16. https://doi.org/10.1109/IIT.2016.7882906

Simulation Study of Implantation Angle Variation and Its Impact on Device Performance. / Chang, Ruey Dar; Lin, Po Heng.
2016 21st International Conference on Ion Implantation Technology, IIT 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7882906 (Proceedings of the International Conference on Ion Implantation Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation Study of Implantation Angle Variation and Its Impact on Device Performance

AU - Chang, Ruey Dar

AU - Lin, Po Heng

PY - 2017/3/20

Y1 - 2017/3/20

N2 - A simulation platform was established to evaluate device performance affected by ion implantation angle variation. Modeling of a one-dimensional wafer scanning system was performed to estimate the angle variation. Process simulation for fin field effect transistors (FinFET) revealed that twist angle affects dopant dose retention in the fin structure. However, the fin structure twists as the arm holding the wafer rotates during scanning. This causes twist angle variation which depends on the length of the rotation arm and the tilt angle. Maximum variation in twist angle occurs near the bottom edge of the wafer. Such variation may increase device driving and leakage current when more twist angle results in more dopant retention in the source/drain extension regions.

AB - A simulation platform was established to evaluate device performance affected by ion implantation angle variation. Modeling of a one-dimensional wafer scanning system was performed to estimate the angle variation. Process simulation for fin field effect transistors (FinFET) revealed that twist angle affects dopant dose retention in the fin structure. However, the fin structure twists as the arm holding the wafer rotates during scanning. This causes twist angle variation which depends on the length of the rotation arm and the tilt angle. Maximum variation in twist angle occurs near the bottom edge of the wafer. Such variation may increase device driving and leakage current when more twist angle results in more dopant retention in the source/drain extension regions.

KW - FinFET

KW - implantation

KW - twist angle

KW - variation

KW - wafer scan

UR - http://www.scopus.com/inward/record.url?scp=85018612636&partnerID=8YFLogxK

U2 - 10.1109/IIT.2016.7882906

DO - 10.1109/IIT.2016.7882906

M3 - 会议稿件

AN - SCOPUS:85018612636

T3 - Proceedings of the International Conference on Ion Implantation Technology

BT - 2016 21st International Conference on Ion Implantation Technology, IIT 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st International Conference on Ion Implantation Technology, IIT 2016

Y2 - 26 September 2016 through 30 September 2016

ER -

Simulation Study of Implantation Angle Variation and Its Impact on Device Performance

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this