Size effect in Cu nano-interconnects and its implication on electromigration

Yuejin Hou*, Cher Ming Tan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

With the interconnect dimensions approaching the length of the mean free path (MFP) of the electron, size effects are becoming important. This is manifested in the increase of the resistivity for nano-interconnects. This change in the electrical properties will pose new challenges in the EM performance for Cu nano-interconnects.

Original languageEnglish
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages610-613
Number of pages4
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: 24 03 200827 03 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/TerritoryChina
CityShanghai
Period24/03/0827/03/08

Keywords

  • Electromigration
  • Nano-interconnect
  • Size effect

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