Soft breakdown of hafnium oxynitride gate dielectrics

Jer Chyi Wang; De Ching Shie; Tan Fu Lei; Chung Len Lee

doi:10.1063/1.1977198

Soft breakdown of hafnium oxynitride gate dielectrics

Jer Chyi Wang^*, De Ching Shie, Tan Fu Lei, Chung Len Lee

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

A detailed study of soft breakdown modes for hafnium oxynitride (HfON) gate dielectrics under stress is investigated. Two types of soft breakdown, digital and analog modes, are observed in HfON gate dielectrics, featuring gate voltage fluctuation accompanying random telegraph noise and nonswitching 1f noise, respectively. The dependence of gate area, oxide thickness, and stress current density on breakdown modes is also studied. Thin oxide thickness and small gate area contribute to the enhancement of charge to breakdown (Qbd). Large Joule heat damage generated under stress inducing the analog soft breakdown for thick hafnium oxynitride films is proposed to clearly understand the breakdown of HfON gate dielectrics.

Original language	English
Article number	024503
Journal	Journal of Applied Physics
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.1977198
State	Published - 15 07 2005
Externally published	Yes

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10.1063/1.1977198

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title = "Soft breakdown of hafnium oxynitride gate dielectrics",

abstract = "A detailed study of soft breakdown modes for hafnium oxynitride (HfON) gate dielectrics under stress is investigated. Two types of soft breakdown, digital and analog modes, are observed in HfON gate dielectrics, featuring gate voltage fluctuation accompanying random telegraph noise and nonswitching 1f noise, respectively. The dependence of gate area, oxide thickness, and stress current density on breakdown modes is also studied. Thin oxide thickness and small gate area contribute to the enhancement of charge to breakdown (Qbd). Large Joule heat damage generated under stress inducing the analog soft breakdown for thick hafnium oxynitride films is proposed to clearly understand the breakdown of HfON gate dielectrics.",

author = "Wang, \{Jer Chyi\} and Shie, \{De Ching\} and Lei, \{Tan Fu\} and Lee, \{Chung Len\}",

year = "2005",

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T1 - Soft breakdown of hafnium oxynitride gate dielectrics

AU - Wang, Jer Chyi

AU - Shie, De Ching

AU - Lei, Tan Fu

AU - Lee, Chung Len

PY - 2005/7/15

Y1 - 2005/7/15

N2 - A detailed study of soft breakdown modes for hafnium oxynitride (HfON) gate dielectrics under stress is investigated. Two types of soft breakdown, digital and analog modes, are observed in HfON gate dielectrics, featuring gate voltage fluctuation accompanying random telegraph noise and nonswitching 1f noise, respectively. The dependence of gate area, oxide thickness, and stress current density on breakdown modes is also studied. Thin oxide thickness and small gate area contribute to the enhancement of charge to breakdown (Qbd). Large Joule heat damage generated under stress inducing the analog soft breakdown for thick hafnium oxynitride films is proposed to clearly understand the breakdown of HfON gate dielectrics.

AB - A detailed study of soft breakdown modes for hafnium oxynitride (HfON) gate dielectrics under stress is investigated. Two types of soft breakdown, digital and analog modes, are observed in HfON gate dielectrics, featuring gate voltage fluctuation accompanying random telegraph noise and nonswitching 1f noise, respectively. The dependence of gate area, oxide thickness, and stress current density on breakdown modes is also studied. Thin oxide thickness and small gate area contribute to the enhancement of charge to breakdown (Qbd). Large Joule heat damage generated under stress inducing the analog soft breakdown for thick hafnium oxynitride films is proposed to clearly understand the breakdown of HfON gate dielectrics.

UR - https://www.scopus.com/pages/publications/23844440928

U2 - 10.1063/1.1977198

DO - 10.1063/1.1977198

M3 - 文章

AN - SCOPUS:23844440928

SN - 0021-8979

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 024503

ER -

Soft breakdown of hafnium oxynitride gate dielectrics

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