Abstract
Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5-0.8 μm and show considerable variations along the p-n junction plane as also is the case for the thickness of the space charge region near the p-i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 103 cm-2.
Original language | English |
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Pages (from-to) | 1591-1595 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 44 |
Issue number | 9 |
DOIs | |
State | Published - 01 09 2000 |
Externally published | Yes |