Stack gate PZT/Al 2O 3 one transistor ferroelectric memory

Albert Chin; M. Y. Yang; C. L. Sun; S. Y. Chen

doi:10.1109/55.930683

Stack gate PZT/Al ₂O ₃ one transistor ferroelectric memory

Albert Chin^*, M. Y. Yang, C. L. Sun, S. Y. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

66 Scopus citations

Abstract

We have developed single transistor ferroelectric memory using stack gate PZT/Al ₂O ₃ structure. For the same ∼40 Å dielectric thickness, the PZT/Al ₂O ₃/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO ₂/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.

Original language	English
Pages (from-to)	336-338
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	7
DOIs	https://doi.org/10.1109/55.930683
State	Published - 07 2001
Externally published	Yes

Keywords

Al O
Ferroelectric
Memory
PZT

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10.1109/55.930683

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title = "Stack gate PZT/Al 2O 3 one transistor ferroelectric memory",

abstract = "We have developed single transistor ferroelectric memory using stack gate PZT/Al 2O 3 structure. For the same ∼40 {\AA} dielectric thickness, the PZT/Al 2O 3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO 2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.",

keywords = "Al O, Ferroelectric, Memory, PZT",

author = "Albert Chin and Yang, {M. Y.} and Sun, {C. L.} and Chen, {S. Y.}",

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AU - Chin, Albert

AU - Yang, M. Y.

AU - Sun, C. L.

AU - Chen, S. Y.

PY - 2001/7

Y1 - 2001/7

N2 - We have developed single transistor ferroelectric memory using stack gate PZT/Al 2O 3 structure. For the same ∼40 Å dielectric thickness, the PZT/Al 2O 3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO 2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.

AB - We have developed single transistor ferroelectric memory using stack gate PZT/Al 2O 3 structure. For the same ∼40 Å dielectric thickness, the PZT/Al 2O 3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO 2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.

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KW - Ferroelectric

KW - Memory

KW - PZT

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ER -

Stack gate PZT/Al ₂O ₃ one transistor ferroelectric memory

Abstract

Keywords

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