Stevens-Johnson syndrome and toxic epidermal necrolysis: risk factors, causality assessment and potential prevention strategies

Chu Chi Lin, Chun Bing Chen, Chuang Wei Wang, Shuen Iu Hung, Wen Hung Chung*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

25 Scopus citations

Abstract

Introduction: The clinical manifestations of cutaneous adverse drug reactions are variable with different severity. Stevens-Johnson syndrome (SJS) and toxic epidermal necrolysis (TEN) are life-threatening severe cutaneous adverse reactions (SCARs) majorly caused by drugs and mediated by cytotoxic T cells. Areas covered: In this review, we focus on risk factors that contribute to the development of SJS/TEN and review the updated immune mechanism, preventive strategies as well as current therapeutic approaches for SJS/TEN. Expert opinion: The progress of SJS/TEN researches reveals that cytotoxic T cells majorly activated by drug interacted with the human leukocyte antigen (HLA) and T cell receptors play an important role for the immune mechanism of SJS/TEN. Several clinical assessment tools and in vitro drug-T cells activation tests have been developed to identify the causality of SJS/TEN. New therapeutic approaches and biologics such as TNF-alpha antagonist have been conducted to improve the prognosis of SJS/TEN.

Original languageEnglish
Pages (from-to)373-387
Number of pages15
JournalExpert Review of Clinical Immunology
Volume16
Issue number4
DOIs
StatePublished - 02 04 2020

Bibliographical note

Publisher Copyright:
© 2020, © 2020 Informa UK Limited, trading as Taylor & Francis Group.

Keywords

  • Human leukocyte antigen (HLA)
  • Stevens-Johnson syndrome (SJS)
  • T cell receptors
  • severe cutaneous adverse reactions
  • toxic epidermal necrolysis (TEN)

Fingerprint

Dive into the research topics of 'Stevens-Johnson syndrome and toxic epidermal necrolysis: risk factors, causality assessment and potential prevention strategies'. Together they form a unique fingerprint.

Cite this