Stopping power of semiconducting III-V compounds for low-energy electrons

C. M. Kwei; C. J. Tung

doi:10.1088/0022-3727/19/2/012

Stopping power of semiconducting III-V compounds for low-energy electrons

C. M. Kwei^*, C. J. Tung

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

19 Scopus citations

Abstract

The stopping power of III-V compounds for incident electrons has been studied. An extended Drude-type dielectric function has been employed for the response of valence band. The local plasma approximation has been applied for the response of inner shells. Stopping powers of GaAs, GaSb, GaP, InSb and InAs were computed and compared to the limited data.

Original language	English
Article number	012
Pages (from-to)	255-263
Number of pages	9
Journal	Journal of Physics D: Applied Physics
Volume	19
Issue number	2
DOIs	https://doi.org/10.1088/0022-3727/19/2/012
State	Published - 1986
Externally published	Yes

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title = "Stopping power of semiconducting III-V compounds for low-energy electrons",

abstract = "The stopping power of III-V compounds for incident electrons has been studied. An extended Drude-type dielectric function has been employed for the response of valence band. The local plasma approximation has been applied for the response of inner shells. Stopping powers of GaAs, GaSb, GaP, InSb and InAs were computed and compared to the limited data.",

author = "Kwei, {C. M.} and Tung, {C. J.}",

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AU - Kwei, C. M.

AU - Tung, C. J.

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N2 - The stopping power of III-V compounds for incident electrons has been studied. An extended Drude-type dielectric function has been employed for the response of valence band. The local plasma approximation has been applied for the response of inner shells. Stopping powers of GaAs, GaSb, GaP, InSb and InAs were computed and compared to the limited data.

AB - The stopping power of III-V compounds for incident electrons has been studied. An extended Drude-type dielectric function has been employed for the response of valence band. The local plasma approximation has been applied for the response of inner shells. Stopping powers of GaAs, GaSb, GaP, InSb and InAs were computed and compared to the limited data.

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U2 - 10.1088/0022-3727/19/2/012

DO - 10.1088/0022-3727/19/2/012

M3 - 文章

AN - SCOPUS:0022665358

SN - 0022-3727

VL - 19

SP - 255

EP - 263

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 2

M1 - 012

ER -

Stopping power of semiconducting III-V compounds for low-energy electrons

Abstract

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