Stopping power of semiconducting III-V compounds for low-energy electrons

C. M. Kwei*, C. J. Tung

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

18 Scopus citations


The stopping power of III-V compounds for incident electrons has been studied. An extended Drude-type dielectric function has been employed for the response of valence band. The local plasma approximation has been applied for the response of inner shells. Stopping powers of GaAs, GaSb, GaP, InSb and InAs were computed and compared to the limited data.

Original languageEnglish
Article number012
Pages (from-to)255-263
Number of pages9
JournalJournal of Physics D: Applied Physics
Issue number2
StatePublished - 1986
Externally publishedYes


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