Abstract
A 14.3 saturation current Id,sat improvement and 0.75dB minimum noise figure (NFmin) at 10GHz were measured by applying ∼0.7 tensile strain for 16 finger, 0.13m RF MOSFETs with thin-body (40m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90nm strained-Si nMOSFETs and consistent with device simulations.
Original language | English |
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Pages (from-to) | 827-829 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 42 |
Issue number | 14 |
DOIs | |
State | Published - 06 07 2006 |
Externally published | Yes |