Strain enhanced DC-RF performance of 0.13 m nMOSFETs on flexible plastic substrate

A. Chin*, H. L. Kao, C. H. Kao, C. C. Liao, Y. Y. Tseng, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

A 14.3 saturation current Id,sat improvement and 0.75dB minimum noise figure (NFmin) at 10GHz were measured by applying ∼0.7 tensile strain for 16 finger, 0.13m RF MOSFETs with thin-body (40m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90nm strained-Si nMOSFETs and consistent with device simulations.

Original languageEnglish
Pages (from-to)827-829
Number of pages3
JournalElectronics Letters
Volume42
Issue number14
DOIs
StatePublished - 06 07 2006
Externally publishedYes

Fingerprint

Dive into the research topics of 'Strain enhanced DC-RF performance of 0.13 m nMOSFETs on flexible plastic substrate'. Together they form a unique fingerprint.

Cite this