Strain enhanced DC-RF performance of 0.13 m nMOSFETs on flexible plastic substrate

A. Chin; H. L. Kao; C. H. Kao; C. C. Liao; Y. Y. Tseng; C. C. Chi

doi:10.1049/el:20061035

Strain enhanced DC-RF performance of 0.13 m nMOSFETs on flexible plastic substrate

A. Chin^*
, H. L. Kao
, C. H. Kao
, C. C. Liao
, Y. Y. Tseng
, C. C. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

A 14.3 saturation current I_d,sat improvement and 0.75dB minimum noise figure (NF_min) at 10GHz were measured by applying ∼0.7 tensile strain for 16 finger, 0.13m RF MOSFETs with thin-body (40m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90nm strained-Si nMOSFETs and consistent with device simulations.

Original language	English
Pages (from-to)	827-829
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	14
DOIs	https://doi.org/10.1049/el:20061035
State	Published - 06 07 2006
Externally published	Yes

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abstract = "A 14.3 saturation current Id,sat improvement and 0.75dB minimum noise figure (NFmin) at 10GHz were measured by applying ∼0.7 tensile strain for 16 finger, 0.13m RF MOSFETs with thin-body (40m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90nm strained-Si nMOSFETs and consistent with device simulations.",

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AU - Chin, A.

AU - Kao, H. L.

AU - Kao, C. H.

AU - Liao, C. C.

AU - Tseng, Y. Y.

AU - Chi, C. C.

PY - 2006/7/6

Y1 - 2006/7/6

N2 - A 14.3 saturation current Id,sat improvement and 0.75dB minimum noise figure (NFmin) at 10GHz were measured by applying ∼0.7 tensile strain for 16 finger, 0.13m RF MOSFETs with thin-body (40m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90nm strained-Si nMOSFETs and consistent with device simulations.

AB - A 14.3 saturation current Id,sat improvement and 0.75dB minimum noise figure (NFmin) at 10GHz were measured by applying ∼0.7 tensile strain for 16 finger, 0.13m RF MOSFETs with thin-body (40m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90nm strained-Si nMOSFETs and consistent with device simulations.

UR - https://www.scopus.com/pages/publications/33745769562

U2 - 10.1049/el:20061035

DO - 10.1049/el:20061035

M3 - 文章

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VL - 42

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JO - Electronics Letters

JF - Electronics Letters

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Strain enhanced DC-RF performance of 0.13 m nMOSFETs on flexible plastic substrate

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