Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period

Po Hsun Chen; Vin Cent Su; Ming Lun Lee; Han Bo Yang; Yao Hong You; Yen Pu Chen; Zheng Hung Hung; Ta Cheng Hsu; Yu Yao Lin; Ray Ming Lin; Chieh Hsiung Kuan

Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period

Po Hsun Chen, Vin Cent Su, Ming Lun Lee, Han Bo Yang, Yao Hong You, Yen Pu Chen, Zheng Hung Hung, Ta Cheng Hsu, Yu Yao Lin, Ray Ming Lin, Chieh Hsiung Kuan

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.

Original language	English
Title of host publication	2015 Conference on Lasers and Electro-Optics, CLEO 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781557529688
State	Published - 10 08 2015
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 10 05 2015 → 15 05 2015

Publication series

Name	Conference on Lasers and Electro-Optics Europe - Technical Digest
Volume	2015-August

Conference

Conference	Conference on Lasers and Electro-Optics, CLEO 2015
Country/Territory	United States
City	San Jose
Period	10/05/15 → 15/05/15

Bibliographical note

Publisher Copyright:
© 2015 OSA.

Keywords

Cascading style sheets
Gallium nitride
Light emitting diodes
Quantum well devices
Simulation
Strain
Substrates

Cite this

Chen, P. H., Su, V. C., Lee, M. L., Yang, H. B., You, Y. H., Chen, Y. P., Hung, Z. H., Hsu, T. C., Lin, Y. Y., Lin, R. M., & Kuan, C. H. (2015). Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 Article 7183433 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{d2b735138c8947a49701626cc1b1e3bc,

title = "Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period",

abstract = "The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.",

keywords = "Cascading style sheets, Gallium nitride, Light emitting diodes, Quantum well devices, Simulation, Strain, Substrates",

author = "Chen, {Po Hsun} and Su, {Vin Cent} and Lee, {Ming Lun} and Yang, {Han Bo} and You, {Yao Hong} and Chen, {Yen Pu} and Hung, {Zheng Hung} and Hsu, {Ta Cheng} and Lin, {Yu Yao} and Lin, {Ray Ming} and Kuan, {Chieh Hsiung}",

note = "Publisher Copyright: {\textcopyright} 2015 OSA.; Conference on Lasers and Electro-Optics, CLEO 2015 ; Conference date: 10-05-2015 Through 15-05-2015",

year = "2015",

month = aug,

day = "10",

language = "英语",

series = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 Conference on Lasers and Electro-Optics, CLEO 2015",

address = "美国",

}

Chen, PH, Su, VC, Lee, ML, Yang, HB, You, YH, Chen, YP, Hung, ZH, Hsu, TC, Lin, YY, Lin, RM & Kuan, CH 2015, Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period. in 2015 Conference on Lasers and Electro-Optics, CLEO 2015., 7183433, Conference on Lasers and Electro-Optics Europe - Technical Digest, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 10/05/15.

Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period. / Chen, Po Hsun; Su, Vin Cent; Lee, Ming Lun et al.
2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7183433 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period

AU - Chen, Po Hsun

AU - Su, Vin Cent

AU - Lee, Ming Lun

AU - Yang, Han Bo

AU - You, Yao Hong

AU - Chen, Yen Pu

AU - Hung, Zheng Hung

AU - Hsu, Ta Cheng

AU - Lin, Yu Yao

AU - Lin, Ray Ming

AU - Kuan, Chieh Hsiung

PY - 2015/8/10

Y1 - 2015/8/10

N2 - The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.

AB - The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.

KW - Cascading style sheets

KW - Gallium nitride

KW - Light emitting diodes

KW - Quantum well devices

KW - Simulation

KW - Strain

KW - Substrates

UR - http://www.scopus.com/inward/record.url?scp=84954057051&partnerID=8YFLogxK

M3 - 会议稿件

AN - SCOPUS:84954057051

T3 - Conference on Lasers and Electro-Optics Europe - Technical Digest

BT - 2015 Conference on Lasers and Electro-Optics, CLEO 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Lasers and Electro-Optics, CLEO 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period

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