Stress migration reliability of wide Cu interconnects with gouging vias

Research output: Contribution to journal › Journal Article › peer-review

Original language	American English
Pages (from-to)	203-208
Journal	IEEE International Reliability Physics Symposium Proceedings
State	Published - 2005

Cite this

@article{5a314e1eceea40ed81e520a0a4985518,

title = "Stress migration reliability of wide Cu interconnects with gouging vias",

author = "R. Arijit and T.J. Lee and Y.K. Lim and K.L. Pey and C.S. Seet and Cher-Ming Tan and D. Vigar",

year = "2005",

language = "American English",

pages = "203--208",

journal = "IEEE International Reliability Physics Symposium Proceedings",

issn = "1541-7026",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Stress migration reliability of wide Cu interconnects with gouging vias

AU - Arijit, R.

AU - Lee, T.J.

AU - Lim, Y.K.

AU - Pey, K.L.

AU - Seet, C.S.

AU - Tan, Cher-Ming

AU - Vigar, D.

PY - 2005

Y1 - 2005

M3 - Journal Article

SN - 1541-7026

SP - 203

EP - 208

JO - IEEE International Reliability Physics Symposium Proceedings

JF - IEEE International Reliability Physics Symposium Proceedings

ER -