Structural and electrical characteristics of high-κ ErTi xOy gate dielectrics on InGaZnO thin-film transistors

Fa Hsyang Chen; Jim Long Her; Yu Hsuan Shao; Wei Chen Li; Yasuhiro H. Matsuda; Tung Ming Pan

doi:10.1016/j.tsf.2013.04.139

Structural and electrical characteristics of high-κ ErTi _xO_y gate dielectrics on InGaZnO thin-film transistors

Fa Hsyang Chen, Jim Long Her, Yu Hsuan Shao, Wei Chen Li, Yasuhiro H. Matsuda, Tung Ming Pan^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTi_xO_y gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTi_xO_y IGZO TFT device annealed at 400 C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm²/V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high I_on/off ratio(3.73 × 10⁶). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTi_xO_y film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C.

Original language	English
Pages (from-to)	251-255
Number of pages	5
Journal	Thin Solid Films
Volume	539
DOIs	https://doi.org/10.1016/j.tsf.2013.04.139
State	Published - 31 07 2013

Keywords

Erbium titanium oxide
Gate dielectric
High-dielectric constant
Indium-gallium-zinc oxide
Thin-film transistors

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@article{61ae33c24b3a4aa09e34dbbcab2f5bf5,

title = "Structural and electrical characteristics of high-κ ErTi xOy gate dielectrics on InGaZnO thin-film transistors",

abstract = "In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTixOy gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTixOy IGZO TFT device annealed at 400 C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm2/V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high Ion/off ratio(3.73 × 106). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTixOy film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C.",

keywords = "Erbium titanium oxide, Gate dielectric, High-dielectric constant, Indium-gallium-zinc oxide, Thin-film transistors",

author = "Chen, {Fa Hsyang} and Her, {Jim Long} and Shao, {Yu Hsuan} and Li, {Wei Chen} and Matsuda, {Yasuhiro H.} and Pan, {Tung Ming}",

year = "2013",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2013.04.139",

language = "英语",

volume = "539",

pages = "251--255",

journal = "Thin Solid Films",

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T1 - Structural and electrical characteristics of high-κ ErTi xOy gate dielectrics on InGaZnO thin-film transistors

AU - Chen, Fa Hsyang

AU - Her, Jim Long

AU - Shao, Yu Hsuan

AU - Li, Wei Chen

AU - Matsuda, Yasuhiro H.

AU - Pan, Tung Ming

PY - 2013/7/31

Y1 - 2013/7/31

N2 - In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTixOy gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTixOy IGZO TFT device annealed at 400 C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm2/V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high Ion/off ratio(3.73 × 106). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTixOy film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C.

AB - In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTixOy gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTixOy IGZO TFT device annealed at 400 C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm2/V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high Ion/off ratio(3.73 × 106). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTixOy film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C.

KW - Erbium titanium oxide

KW - Gate dielectric

KW - High-dielectric constant

KW - Indium-gallium-zinc oxide

KW - Thin-film transistors

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DO - 10.1016/j.tsf.2013.04.139

M3 - 文章

AN - SCOPUS:84879415395

SN - 0040-6090

VL - 539

SP - 251

EP - 255

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Structural and electrical characteristics of high-κ ErTi _xO_y gate dielectrics on InGaZnO thin-film transistors

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Keywords

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