Structural and electrical characteristics of high-κ Sm2TiO5 gate dielectrics for InGaZnO thin-film transistors

Fa Hsyang Chen; Ching Hung Chen; Tung Ming Pan

doi:10.1109/TDEI.2015.7116319

Structural and electrical characteristics of high-κ Sm₂TiO₅ gate dielectrics for InGaZnO thin-film transistors

Fa Hsyang Chen, Ching Hung Chen, Tung Ming Pan

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm₂TiO₅ gate dielectrics. The high-κ Sm₂TiO₅ α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high I_on/off ratio of 5.27×10⁷, a high field-effect mobility of 27.8 cm²/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm₂O₃ film, resulting in the formation of good Sm₂TiO₅ gate dielectric and low density of interface states at the oxide/channel interface.

Original language	English
Article number	7116319
Pages (from-to)	1337-1342
Number of pages	6
Journal	IEEE Transactions on Dielectrics and Electrical Insulation
Volume	22
Issue number	3
DOIs	https://doi.org/10.1109/TDEI.2015.7116319
State	Published - 01 06 2015

Keywords

Amorphous indium-gallium-zinc oxide (α-IGZO)
Gate dielectric
SmTiO
Thin-film transistor (TFT)

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10.1109/TDEI.2015.7116319

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abstract = "In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm2TiO5 gate dielectrics. The high-κ Sm2TiO5 α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high Ion/off ratio of 5.27×107, a high field-effect mobility of 27.8 cm2/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.",

keywords = "Amorphous indium-gallium-zinc oxide (α-IGZO), Gate dielectric, SmTiO, Thin-film transistor (TFT)",

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AU - Chen, Fa Hsyang

AU - Chen, Ching Hung

AU - Pan, Tung Ming

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm2TiO5 gate dielectrics. The high-κ Sm2TiO5 α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high Ion/off ratio of 5.27×107, a high field-effect mobility of 27.8 cm2/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.

AB - In this study, we developed an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) incorporating high-κ Sm2TiO5 gate dielectrics. The high-κ Sm2TiO5 α-IGZO TFT after annealing at 400° C exhibited very good electrical characteristics, such as a high Ion/off ratio of 5.27×107, a high field-effect mobility of 27.8 cm2/V-sec, a low threshold voltage of 0.2 V, and a low subthreshold swing of 136 mV/decade. These results are probably due to the incorporation of Ti into the Sm2O3 film, resulting in the formation of good Sm2TiO5 gate dielectric and low density of interface states at the oxide/channel interface.

KW - Amorphous indium-gallium-zinc oxide (α-IGZO)

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KW - Thin-film transistor (TFT)

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Structural and electrical characteristics of high-κ Sm₂TiO₅ gate dielectrics for InGaZnO thin-film transistors

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Keywords

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