Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si 0.69Ge0.3C0.01 layers

R. Mahapatra; S. Maikap; Je Hun Lee; G. S. Kar; A. Dhar; Kim Doh-Y. Kim; D. Bhattacharya; S. K. Ray

doi:10.1116/1.1603279

Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers

R. Mahapatra
, S. Maikap
, Je Hun Lee
, G. S. Kar
, A. Dhar
, Kim Doh-Y. Kim
, D. Bhattacharya
, S. K. Ray^*

^*Corresponding author for this work

Indian Institute of Technology Kharagpur
Seoul National University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

The structural characteristics of ZrO₂ films deposited on strain compensated Si_0.69Ge_0.3C_0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.

Original language	English
Pages (from-to)	1758-1764
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	5
DOIs	https://doi.org/10.1116/1.1603279
State	Published - 09 2003
Externally published	Yes

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10.1116/1.1603279

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Mahapatra, R., Maikap, S., Lee, J. H., Kar, G. S., Dhar, A., Doh-Y. Kim, K., Bhattacharya, D., & Ray, S. K. (2003). Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 21(5), 1758-1764. https://doi.org/10.1116/1.1603279

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title = "Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si 0.69Ge0.3C0.01 layers",

abstract = "The structural characteristics of ZrO2 films deposited on strain compensated Si0.69Ge0.3C0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.",

author = "R. Mahapatra and S. Maikap and Lee, \{Je Hun\} and Kar, \{G. S.\} and A. Dhar and \{Doh-Y. Kim\}, Kim and D. Bhattacharya and Ray, \{S. K.\}",

year = "2003",

month = sep,

doi = "10.1116/1.1603279",

language = "英语",

volume = "21",

pages = "1758--1764",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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Mahapatra, R, Maikap, S, Lee, JH, Kar, GS, Dhar, A, Doh-Y. Kim, K, Bhattacharya, D & Ray, SK 2003, 'Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 21, no. 5, pp. 1758-1764. https://doi.org/10.1116/1.1603279

Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers. / Mahapatra, R.; Maikap, S.; Lee, Je Hun et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 5, 09.2003, p. 1758-1764.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si 0.69Ge0.3C0.01 layers

AU - Mahapatra, R.

AU - Maikap, S.

AU - Lee, Je Hun

AU - Kar, G. S.

AU - Dhar, A.

AU - Doh-Y. Kim, Kim

AU - Bhattacharya, D.

AU - Ray, S. K.

PY - 2003/9

Y1 - 2003/9

N2 - The structural characteristics of ZrO2 films deposited on strain compensated Si0.69Ge0.3C0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.

AB - The structural characteristics of ZrO2 films deposited on strain compensated Si0.69Ge0.3C0.01/Si heterostructure were investigated. X-ray diffraction, high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy were used for the analysis. The films were found to be polycrytalline with both monoclinic and tetragonal phases.

UR - https://www.scopus.com/pages/publications/0142027001

U2 - 10.1116/1.1603279

DO - 10.1116/1.1603279

M3 - 文章

AN - SCOPUS:0142027001

SN - 0734-2101

VL - 21

SP - 1758

EP - 1764

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Structural and electrical characteristics of the interfacial layer of ultrathin ZrO₂ films on partially strain compensated Si _0.69Ge_0.3C_0.01 layers

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