Structural and electrical characteristics of Yb2O3 and YbTixOy gate dielectrics for α-InGaZnO thin-film transistors

Tung Ming Pan; Ching Hung Chen; Fa Hsyang Chen; Yu Shu Huang; Jim Long Her

doi:10.1109/JDT.2014.2380453

Structural and electrical characteristics of Yb₂O₃ and YbTi_xO_y gate dielectrics for α-InGaZnO thin-film transistors

Tung Ming Pan, Ching Hung Chen, Fa Hsyang Chen, Yu Shu Huang, Jim Long Her

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

In this paper, we developed high-κ Yb₂O₃ and YbTi_xO_y gate dielectrics for an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) applications. Compared with the Yb₂O₃ dielectric, the α-IGZO TFT using the high-κ YbTi_xO_y gate dielectric exhibited better electrical characteristics, such as a high I_on/I_off ratio of 4.55× 10⁷ , a high field-effect mobility of 26.1 cm²/V-s , a low threshold voltage of 0.53 V, and a low subthreshold swing of 210 mV/decade. These results are probably due to the incorporation of Ti into the Yb₂O₃ film, resulting in the formation of smooth surface and low density of interface states at the oxide/channel interface. Furthermore, the stability of high-κ Yb₂O}₃ and YbTi_xO}_y α-IGZO TFTs was investigated under both positive bias stress and negative bias stress conditions.

Original language	English
Article number	6998846
Pages (from-to)	248-254
Number of pages	7
Journal	IEEE/OSA Journal of Display Technology
Volume	11
Issue number	3
DOIs	https://doi.org/10.1109/JDT.2014.2380453
State	Published - 01 03 2015

Bibliographical note

Publisher Copyright:
© 2005-2012 IEEE.

Keywords

Amorphous indium-gallium-zinc oxide (α-IGZO)
YbO
YbTiO
gate dielectric
negative bias stress (NBS)
positive bias stress (PBS)
thin-film transistor (TFT)

Access to Document

10.1109/JDT.2014.2380453

Cite this

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title = "Structural and electrical characteristics of Yb2O3 and YbTixOy gate dielectrics for α-InGaZnO thin-film transistors",

abstract = "In this paper, we developed high-κ Yb2O3 and YbTixOy gate dielectrics for an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) applications. Compared with the Yb2O3 dielectric, the α-IGZO TFT using the high-κ YbTixOy gate dielectric exhibited better electrical characteristics, such as a high Ion/Ioff ratio of 4.55× 107 , a high field-effect mobility of 26.1 cm2/V-s , a low threshold voltage of 0.53 V, and a low subthreshold swing of 210 mV/decade. These results are probably due to the incorporation of Ti into the Yb2O3 film, resulting in the formation of smooth surface and low density of interface states at the oxide/channel interface. Furthermore, the stability of high-κ Yb2O}3 and YbTixO}y α-IGZO TFTs was investigated under both positive bias stress and negative bias stress conditions.",

keywords = "Amorphous indium-gallium-zinc oxide (α-IGZO), YbO, YbTiO, gate dielectric, negative bias stress (NBS), positive bias stress (PBS), thin-film transistor (TFT)",

author = "Pan, {Tung Ming} and Chen, {Ching Hung} and Chen, {Fa Hsyang} and Huang, {Yu Shu} and Her, {Jim Long}",

note = "Publisher Copyright: {\textcopyright} 2005-2012 IEEE.",

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AU - Pan, Tung Ming

AU - Chen, Ching Hung

AU - Chen, Fa Hsyang

AU - Huang, Yu Shu

AU - Her, Jim Long

PY - 2015/3/1

Y1 - 2015/3/1

N2 - In this paper, we developed high-κ Yb2O3 and YbTixOy gate dielectrics for an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) applications. Compared with the Yb2O3 dielectric, the α-IGZO TFT using the high-κ YbTixOy gate dielectric exhibited better electrical characteristics, such as a high Ion/Ioff ratio of 4.55× 107 , a high field-effect mobility of 26.1 cm2/V-s , a low threshold voltage of 0.53 V, and a low subthreshold swing of 210 mV/decade. These results are probably due to the incorporation of Ti into the Yb2O3 film, resulting in the formation of smooth surface and low density of interface states at the oxide/channel interface. Furthermore, the stability of high-κ Yb2O}3 and YbTixO}y α-IGZO TFTs was investigated under both positive bias stress and negative bias stress conditions.

AB - In this paper, we developed high-κ Yb2O3 and YbTixOy gate dielectrics for an amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) applications. Compared with the Yb2O3 dielectric, the α-IGZO TFT using the high-κ YbTixOy gate dielectric exhibited better electrical characteristics, such as a high Ion/Ioff ratio of 4.55× 107 , a high field-effect mobility of 26.1 cm2/V-s , a low threshold voltage of 0.53 V, and a low subthreshold swing of 210 mV/decade. These results are probably due to the incorporation of Ti into the Yb2O3 film, resulting in the formation of smooth surface and low density of interface states at the oxide/channel interface. Furthermore, the stability of high-κ Yb2O}3 and YbTixO}y α-IGZO TFTs was investigated under both positive bias stress and negative bias stress conditions.

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