Structural and electrical properties of Tb2TiO5 charge trapping layer memories

Tung Ming Pan; Fa Hsyang Chen; Ji Shing Jung

doi:10.1109/ICONN.2010.6045160

Structural and electrical properties of Tb₂TiO₅ charge trapping layer memories

Tung Ming Pan^*, Fa Hsyang Chen, Ji Shing Jung

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We proposed a metal-oxide-high-k-oxide-silicon (MOHOS) memory structure using a high-k Tb₂TiO₅ as a charge trapping layer for nonvolatile memory application. The structural and morphological features of these films were explored by x-ray diffraction, transmission electron microscopic, atomic force microscopy, and x-ray photoelectron spectroscopic. The Tb₂TiO₅ MOHOS-type memory annealed 800 C exhibited a large memory window of 2.9 V and a low charge loss of 15 % after 10 years. These results are attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Tb₂TiO ₅ structure with a higher dielectric constant.

Original language	English
Title of host publication	ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
Pages	293-295
Number of pages	3
DOIs	https://doi.org/10.1109/ICONN.2010.6045160
State	Published - 2010
Event	2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010 - Sydney, NSW, Australia Duration: 22 02 2010 → 26 02 2010

Publication series

Name	ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology

Conference

Conference	2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010
Country/Territory	Australia
City	Sydney, NSW
Period	22/02/10 → 26/02/10

Keywords

Charge trapping layer
Metal-oxide-high-k- oxide-silicon (MOHOS)
TbTiO

Access to Document

10.1109/ICONN.2010.6045160

Cite this

Pan, T. M., Chen, F. H., & Jung, J. S. (2010). Structural and electrical properties of Tb₂TiO₅ charge trapping layer memories. In ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology (pp. 293-295). Article 6045160 (ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology). https://doi.org/10.1109/ICONN.2010.6045160

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title = "Structural and electrical properties of Tb2TiO5 charge trapping layer memories",

abstract = "We proposed a metal-oxide-high-k-oxide-silicon (MOHOS) memory structure using a high-k Tb2TiO5 as a charge trapping layer for nonvolatile memory application. The structural and morphological features of these films were explored by x-ray diffraction, transmission electron microscopic, atomic force microscopy, and x-ray photoelectron spectroscopic. The Tb2TiO5 MOHOS-type memory annealed 800 C exhibited a large memory window of 2.9 V and a low charge loss of 15 % after 10 years. These results are attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Tb2TiO 5 structure with a higher dielectric constant.",

keywords = "Charge trapping layer, Metal-oxide-high-k- oxide-silicon (MOHOS), TbTiO",

author = "Pan, {Tung Ming} and Chen, {Fa Hsyang} and Jung, {Ji Shing}",

year = "2010",

doi = "10.1109/ICONN.2010.6045160",

language = "英语",

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series = "ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology",

pages = "293--295",

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note = "2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010 ; Conference date: 22-02-2010 Through 26-02-2010",

}

Pan, TM, Chen, FH & Jung, JS 2010, Structural and electrical properties of Tb₂TiO₅ charge trapping layer memories. in ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology., 6045160, ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, pp. 293-295, 2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010, Sydney, NSW, Australia, 22/02/10. https://doi.org/10.1109/ICONN.2010.6045160

Structural and electrical properties of Tb₂TiO₅ charge trapping layer memories. / Pan, Tung Ming; Chen, Fa Hsyang; Jung, Ji Shing.
ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology. 2010. p. 293-295 6045160 (ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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