Abstract
This paper describes the structural and sensing characteristics of Gd 2Ti2O7, Er2TiO5, and Lu2Ti2O7 sensing membranes deposited on Si substrates through reactive co-sputtering for electrolyte-insulator- semiconductor (EIS) pH sensors. In this work, the structural properties of Gd2Ti2O7, Er2TiO5, and Lu2Ti2O7 membranes were investigated by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. The observed structural properties were then correlated with the resulting pH sensing performances. The EIS device incorporating a Lu2Ti 2O7 sensing film exhibited a higher sensitivity (59.32 mV pH-1), a larger drift rate (0.55 mV h-1), a higher hysteresis voltage (5 mV), and a larger hysteresis gap (∼70 mV) compared to those of the other sensing films. This result is attributed to the higher surface roughness and the formation of a thicker interfacial layer at the oxide-Si interface. Furthermore, the impedance effect of EIS sensors has been investigated using capacitance-voltage (C-V) method (frequency-dependent C-V curves). From the impedance spectroscopy analysis, we find that the diameter of a semicircle of an EIS sensor becomes smaller due to a gradual decrease in the bulk resistance of the device with degree of pH value.
Original language | English |
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Pages (from-to) | 798-806 |
Number of pages | 9 |
Journal | Electrochimica Acta |
Volume | 89 |
DOIs | |
State | Published - 01 02 2013 |
Keywords
- Electrolyte-insulator-semiconductor (EIS)
- ErTiO
- GdTi O
- Impedance spectroscopy
- LuTi O