Structural and sensing properties of high-k PrTiO3sensing membranes for pH-ISFET applications

Tung Ming Pan, Kao Ming Liao

Research output: Contribution to journalJournal Article peer-review

6 Scopus citations


We describe an electrolyteinsulatorsemiconductor (EIS) device for biomedical engineering applications prepared from high-k PrTiO3 sensing membranes deposited on Si substrates by means of reactive radio-frequency sputtering. We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these films after they had been subjected to annealing at various temperatures. The EIS device incorporating a high-k PrTiO 3 sensing film that had been annealed at 800 °C exhibited a higher sensitivity (56.8 mV/pH, in the solutions from pH 2 to 12), a smaller hysteresis voltage (2.84 mV in the pH loop 7→4→7 →10→ 7), and a lower drift rate (1.77 mV/h in the pH 7 buffer solution) than did those prepared at the other annealing temperatures, presumably because of its thinner low-k interfacial layer at the oxideSi interface and its higher surface roughness.

Original languageEnglish
Article number4655599
Pages (from-to)471-476
Number of pages6
JournalIEEE Transactions on Biomedical Engineering
Issue number2
StatePublished - 02 2009


  • Annealed at 800 °C
  • Drift rate
  • Electrolyte-insulator semiconductor (EIS)
  • Hysteresis
  • Interfacial SiO and silicate layer
  • PrTiO
  • Sensing membrane
  • Sensitivity


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