Structural and Sensing Properties of Sol-Gel Synthesized Ce2(Zr1-xTix)Oy Sensing Films for pH Sensors

Sankar Prasad Bag; Bih Show Lou; Jim Long Her; See Tong Pang; Tung Ming Pan

doi:10.1109/TED.2017.2731341

Structural and Sensing Properties of Sol-Gel Synthesized Ce₂(Zr_1-xTi_x)O_y Sensing Films for pH Sensors

Sankar Prasad Bag
, Bih Show Lou
, Jim Long Her
, See Tong Pang
, Tung Ming Pan^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

In this brief, the structural properties and sensing characteristics of spin-coated Ce₂(Zr_1-xTi_x)O_y (CZT) sensing film were investigated for electrolyte-insulator-semiconductor (EIS) pH sensors. A higher pH sensitivity of 64.42 mV/pH, a lower hysteresis voltage of 1.1 mV, and a smaller drift rate of 0.36 mV/h were achieved in the CZT-embedded EIS sensors at Zr/Ti = 53/47 stoichiometry. The higher sensing behavior in CZT is attributed to the good crystallization and higher surface roughness of the film.

Original language	English
Article number	8002613
Pages (from-to)	3971-3975
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	9
DOIs	https://doi.org/10.1109/TED.2017.2731341
State	Published - 09 2017

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Ce(Zr1-xTix)Oy (CZT)
electrolyte-insulator-semiconductor (EIS)
pH sensor
sol-gel method

Access to Document

10.1109/TED.2017.2731341

Cite this

@article{9d640fce5737490ba080af2e15039c8e,

title = "Structural and Sensing Properties of Sol-Gel Synthesized Ce2(Zr1-xTix)Oy Sensing Films for pH Sensors",

abstract = "In this brief, the structural properties and sensing characteristics of spin-coated Ce2(Zr1-xTix)Oy (CZT) sensing film were investigated for electrolyte-insulator-semiconductor (EIS) pH sensors. A higher pH sensitivity of 64.42 mV/pH, a lower hysteresis voltage of 1.1 mV, and a smaller drift rate of 0.36 mV/h were achieved in the CZT-embedded EIS sensors at Zr/Ti = 53/47 stoichiometry. The higher sensing behavior in CZT is attributed to the good crystallization and higher surface roughness of the film.",

keywords = "Ce(Zr1-xTix)Oy (CZT), electrolyte-insulator-semiconductor (EIS), pH sensor, sol-gel method",

author = "Bag, \{Sankar Prasad\} and Lou, \{Bih Show\} and Her, \{Jim Long\} and Pang, \{See Tong\} and Pan, \{Tung Ming\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = sep,

doi = "10.1109/TED.2017.2731341",

language = "英语",

volume = "64",

pages = "3971--3975",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Structural and Sensing Properties of Sol-Gel Synthesized Ce2(Zr1-xTix)Oy Sensing Films for pH Sensors

AU - Bag, Sankar Prasad

AU - Lou, Bih Show

AU - Her, Jim Long

AU - Pang, See Tong

AU - Pan, Tung Ming

PY - 2017/9

Y1 - 2017/9

N2 - In this brief, the structural properties and sensing characteristics of spin-coated Ce2(Zr1-xTix)Oy (CZT) sensing film were investigated for electrolyte-insulator-semiconductor (EIS) pH sensors. A higher pH sensitivity of 64.42 mV/pH, a lower hysteresis voltage of 1.1 mV, and a smaller drift rate of 0.36 mV/h were achieved in the CZT-embedded EIS sensors at Zr/Ti = 53/47 stoichiometry. The higher sensing behavior in CZT is attributed to the good crystallization and higher surface roughness of the film.

AB - In this brief, the structural properties and sensing characteristics of spin-coated Ce2(Zr1-xTix)Oy (CZT) sensing film were investigated for electrolyte-insulator-semiconductor (EIS) pH sensors. A higher pH sensitivity of 64.42 mV/pH, a lower hysteresis voltage of 1.1 mV, and a smaller drift rate of 0.36 mV/h were achieved in the CZT-embedded EIS sensors at Zr/Ti = 53/47 stoichiometry. The higher sensing behavior in CZT is attributed to the good crystallization and higher surface roughness of the film.

KW - Ce(Zr1-xTix)Oy (CZT)

KW - electrolyte-insulator-semiconductor (EIS)

KW - pH sensor

KW - sol-gel method

UR - https://www.scopus.com/pages/publications/85029007588

U2 - 10.1109/TED.2017.2731341

DO - 10.1109/TED.2017.2731341

M3 - 文章

AN - SCOPUS:85029007588

SN - 0018-9383

VL - 64

SP - 3971

EP - 3975

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 8002613

ER -