Abstract
In this paper, we studied the structural properties and electrical characteristics of high-dielectric constant (high-κ) Tm2O3 gate dielectrics for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) applications. We used X-ray diffraction to determine the growth directions and crystallinity of the Tm2O3 films, X-ray photoelectron spectroscopy to analyze the chemical structure of the films, and to monitor the morphological feature of the Tm2O3 films after annealing at various temperatures. The high-κ Tm2O3 a-IGZO TFT annealed at 400°C exhibited a lower threshold voltage of 1.68 V, a higher field effect mobility of 11.8 cm2/V-s, a larger Ion/Ioff ratio of 3.9×107, and a smaller SS of 420 mV/dec., relative to those of the systems that had been subjected to other annealing conditions. This result suggests the Tm2O3 film featuring a higher dielectric constant as well as a smoother surface. The VTH stability on high-κ Tm2O3 IGZO TFTs was also explored under positive bias stress.
Original language | English |
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Pages (from-to) | 1973-1978 |
Number of pages | 6 |
Journal | Science of Advanced Materials |
Volume | 6 |
Issue number | 9 |
DOIs | |
State | Published - 2014 |
Bibliographical note
Publisher Copyright:© 2014 by American Scientific Publishers.
Keywords
- High-dielectric constant (high-κ)
- Indium-gallium-zinc-oxide (a-IGZO)
- Thin-film transistor (TFT)
- TmO