Structural properties and electrical characteristics of high-κ Tm2O3 gate dielectrics for InGaZnO thin film transistors

Tung Ming Pan*, Fa Hsyang Chen, Meng Ning Hung, Jim Long Her, Keiichi Koyama

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

In this paper, we studied the structural properties and electrical characteristics of high-dielectric constant (high-κ) Tm2O3 gate dielectrics for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) applications. We used X-ray diffraction to determine the growth directions and crystallinity of the Tm2O3 films, X-ray photoelectron spectroscopy to analyze the chemical structure of the films, and to monitor the morphological feature of the Tm2O3 films after annealing at various temperatures. The high-κ Tm2O3 a-IGZO TFT annealed at 400°C exhibited a lower threshold voltage of 1.68 V, a higher field effect mobility of 11.8 cm2/V-s, a larger Ion/Ioff ratio of 3.9×107, and a smaller SS of 420 mV/dec., relative to those of the systems that had been subjected to other annealing conditions. This result suggests the Tm2O3 film featuring a higher dielectric constant as well as a smoother surface. The VTH stability on high-κ Tm2O3 IGZO TFTs was also explored under positive bias stress.

Original languageEnglish
Pages (from-to)1973-1978
Number of pages6
JournalScience of Advanced Materials
Volume6
Issue number9
DOIs
StatePublished - 2014

Bibliographical note

Publisher Copyright:
© 2014 by American Scientific Publishers.

Keywords

  • High-dielectric constant (high-κ)
  • Indium-gallium-zinc-oxide (a-IGZO)
  • Thin-film transistor (TFT)
  • TmO

Fingerprint

Dive into the research topics of 'Structural properties and electrical characteristics of high-κ Tm2O3 gate dielectrics for InGaZnO thin film transistors'. Together they form a unique fingerprint.

Cite this