Abstract
This paper describes the structural properties and electrical characteristics of thin Dy 2 O 3 dielectrics deposited on silicon substrates by means of reactive sputtering. The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Dy 2 O 3 dielectrics annealed at 700 °C exhibit a thinner capacitance equivalent thickness and better electrical properties, including the interface trap density and the hysteresis in the capacitance-voltage curves. Under constant current stress, the Weibull slope of the charge-to-breakdown of the 700 °C-annealed films is about 1.6. These results are attributed to the formation of well-crystallized Dy 2 O 3 structure and the reduction of the interfacial SiO 2 layer.
Original language | English |
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Pages (from-to) | 3964-3968 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 257 |
Issue number | 9 |
DOIs | |
State | Published - 15 02 2011 |
Keywords
- Gate dielectric
- Postdeposition annealing (PDA)