Structural properties and electrical characteristics of high-k Tm                         2                         Ti                         2                         O                         7                          gate dielectrics

Tung Ming Pan; Li Chen Yen

doi:10.1016/j.apsusc.2009.10.017

Structural properties and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics

Tung Ming Pan^*, Li Chen Yen

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

In this article, the structural and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm ₂ Ti ₂ O ₇ dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm ₂ Ti ₂ O ₇ structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress.

Original language	English
Pages (from-to)	1845-1848
Number of pages	4
Journal	Applied Surface Science
Volume	256
Issue number	6
DOIs	https://doi.org/10.1016/j.apsusc.2009.10.017
State	Published - 01 01 2010

Keywords

Gate dielectrics
High-k Tm Ti O

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10.1016/j.apsusc.2009.10.017

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Pan, T. M., & Yen, L. C. (2010). Structural properties and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics Applied Surface Science, 256(6), 1845-1848. https://doi.org/10.1016/j.apsusc.2009.10.017

Pan, Tung Ming ; Yen, Li Chen. / Structural properties and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics In: Applied Surface Science. 2010 ; Vol. 256, No. 6. pp. 1845-1848.

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title = " Structural properties and electrical characteristics of high-k Tm 2 Ti 2 O 7 gate dielectrics ",

abstract = " In this article, the structural and electrical characteristics of high-k Tm 2 Ti 2 O 7 gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm 2 Ti 2 O 7 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm 2 Ti 2 O 7 structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress.",

keywords = "Gate dielectrics, High-k Tm Ti O",

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Pan, TM & Yen, LC 2010, ' Structural properties and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics ', Applied Surface Science, vol. 256, no. 6, pp. 1845-1848. https://doi.org/10.1016/j.apsusc.2009.10.017

Structural properties and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics . / Pan, Tung Ming; Yen, Li Chen.
In: Applied Surface Science, Vol. 256, No. 6, 01.01.2010, p. 1845-1848.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Structural properties and electrical characteristics of high-k Tm 2 Ti 2 O 7 gate dielectrics

AU - Pan, Tung Ming

AU - Yen, Li Chen

PY - 2010/1/1

Y1 - 2010/1/1

N2 - In this article, the structural and electrical characteristics of high-k Tm 2 Ti 2 O 7 gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm 2 Ti 2 O 7 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm 2 Ti 2 O 7 structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress.

AB - In this article, the structural and electrical characteristics of high-k Tm 2 Ti 2 O 7 gate dielectrics deposited on Si (1 0 0) by means of reactive cosputtering were reported. The Tm 2 Ti 2 O 7 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to a rather well-crystallized Tm 2 Ti 2 O 7 structure and composition and a smooth surface observed by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. This film also shows almost negligible charge trapping under high constant voltage stress.

KW - Gate dielectrics

KW - High-k Tm Ti O

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U2 - 10.1016/j.apsusc.2009.10.017

DO - 10.1016/j.apsusc.2009.10.017

M3 - 文章

AN - SCOPUS:72549108321

SN - 0169-4332

VL - 256

SP - 1845

EP - 1848

JO - Applied Surface Science

JF - Applied Surface Science

IS - 6

ER -

Pan TM, Yen LC. Structural properties and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics Applied Surface Science. 2010 Jan 1;256(6):1845-1848. doi: 10.1016/j.apsusc.2009.10.017

Structural properties and electrical characteristics of high-k Tm ₂ Ti ₂ O ₇ gate dielectrics

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