Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices

Tung Ming Pan; Chih Hung Lu

doi:10.1016/j.matchemphys.2013.01.015

Structural properties and electroforming-free resistive switching characteristics of GdO_x, TbO_x, and HoO_x memory devices

Tung Ming Pan^*, Chih Hung Lu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

19 Scopus citations

Abstract

Resistive random access memory (RRAM) using the Ru/REO_x/TaN (rare-earth, RE, RE = Gd, Tb and Ho) structures is fabricated with full room temperature process and is not required the electroforming process. X-ray diffraction and X-ray photoelectron spectroscopy were used to study the structural and chemical features of REO_x films. The conduction mechanism of REO_x-based RRAM memory devices in the low-resistance state is Ohmic emission, whereas the high-resistance state is space-charge-limited conduction. The GdO_x-based RRAM devices show high-resistance ratio of about 10⁴, reliable data retention of 10⁵ s, and stable cycling behaviors for up to 190 cycles. This result suggests the high concentration of the metallic Gd⁰ and oxygen vacancies in GdO_x film. The Ru/GdO_x/TaN structure memory is a possible candidate for next-generation nonvolatile memory applications.

Original language	English
Pages (from-to)	437-442
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	139
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2013.01.015
State	Published - 15 05 2013

Keywords

Electrical properties
Electronic materials
Oxides
Semiconductors

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10.1016/j.matchemphys.2013.01.015

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title = "Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices",

abstract = "Resistive random access memory (RRAM) using the Ru/REOx/TaN (rare-earth, RE, RE = Gd, Tb and Ho) structures is fabricated with full room temperature process and is not required the electroforming process. X-ray diffraction and X-ray photoelectron spectroscopy were used to study the structural and chemical features of REOx films. The conduction mechanism of REOx-based RRAM memory devices in the low-resistance state is Ohmic emission, whereas the high-resistance state is space-charge-limited conduction. The GdOx-based RRAM devices show high-resistance ratio of about 104, reliable data retention of 105 s, and stable cycling behaviors for up to 190 cycles. This result suggests the high concentration of the metallic Gd0 and oxygen vacancies in GdOx film. The Ru/GdOx/TaN structure memory is a possible candidate for next-generation nonvolatile memory applications.",

keywords = "Electrical properties, Electronic materials, Oxides, Semiconductors",

author = "Pan, {Tung Ming} and Lu, {Chih Hung}",

year = "2013",

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doi = "10.1016/j.matchemphys.2013.01.015",

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journal = "Materials Chemistry and Physics",

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TY - JOUR

T1 - Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices

AU - Pan, Tung Ming

AU - Lu, Chih Hung

PY - 2013/5/15

Y1 - 2013/5/15

N2 - Resistive random access memory (RRAM) using the Ru/REOx/TaN (rare-earth, RE, RE = Gd, Tb and Ho) structures is fabricated with full room temperature process and is not required the electroforming process. X-ray diffraction and X-ray photoelectron spectroscopy were used to study the structural and chemical features of REOx films. The conduction mechanism of REOx-based RRAM memory devices in the low-resistance state is Ohmic emission, whereas the high-resistance state is space-charge-limited conduction. The GdOx-based RRAM devices show high-resistance ratio of about 104, reliable data retention of 105 s, and stable cycling behaviors for up to 190 cycles. This result suggests the high concentration of the metallic Gd0 and oxygen vacancies in GdOx film. The Ru/GdOx/TaN structure memory is a possible candidate for next-generation nonvolatile memory applications.

AB - Resistive random access memory (RRAM) using the Ru/REOx/TaN (rare-earth, RE, RE = Gd, Tb and Ho) structures is fabricated with full room temperature process and is not required the electroforming process. X-ray diffraction and X-ray photoelectron spectroscopy were used to study the structural and chemical features of REOx films. The conduction mechanism of REOx-based RRAM memory devices in the low-resistance state is Ohmic emission, whereas the high-resistance state is space-charge-limited conduction. The GdOx-based RRAM devices show high-resistance ratio of about 104, reliable data retention of 105 s, and stable cycling behaviors for up to 190 cycles. This result suggests the high concentration of the metallic Gd0 and oxygen vacancies in GdOx film. The Ru/GdOx/TaN structure memory is a possible candidate for next-generation nonvolatile memory applications.

KW - Electrical properties

KW - Electronic materials

KW - Oxides

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=84875926685&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2013.01.015

DO - 10.1016/j.matchemphys.2013.01.015

M3 - 文章

AN - SCOPUS:84875926685

SN - 0254-0584

VL - 139

SP - 437

EP - 442

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Structural properties and electroforming-free resistive switching characteristics of GdO_x, TbO_x, and HoO_x memory devices

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Keywords

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