Structural properties of Al                         2                         O                         3                          dielectrics grown on TiN metal substrates by atomic layer deposition

Chun I. Hsieh; Tung Ming Pan; Jian Chyi Lin; Yan Bo Peng; Tsai Yu Huang; Chang Rong Wu; Steven Shih

doi:10.1016/j.apsusc.2008.10.048

Structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates by atomic layer deposition

Chun I. Hsieh, Tung Ming Pan^*, Jian Chyi Lin, Yan Bo Peng, Tsai Yu Huang, Chang Rong Wu, Steven Shih

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

We investigated on the structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O ₃ or H ₂ O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al ₂ O ₃ dielectric films with the O ₃ oxidant exhibit a rough morphology, a thick TiO ₂ film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO ₂ layer on the TiN substrate. This is due to the higher oxidation potential of the O ₃ compared to the H ₂ O.

Original language	English
Pages (from-to)	3769-3772
Number of pages	4
Journal	Applied Surface Science
Volume	255
Issue number	6
DOIs	https://doi.org/10.1016/j.apsusc.2008.10.048
State	Published - 01 01 2009

Keywords

Al O dielectrics
H O
O
TiN metal substrate
TiO

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10.1016/j.apsusc.2008.10.048

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Hsieh, C. I., Pan, T. M., Lin, J. C., Peng, Y. B., Huang, T. Y., Wu, C. R., & Shih, S. (2009). Structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates by atomic layer deposition Applied Surface Science, 255(6), 3769-3772. https://doi.org/10.1016/j.apsusc.2008.10.048

Hsieh, Chun I. ; Pan, Tung Ming ; Lin, Jian Chyi et al. / Structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates by atomic layer deposition In: Applied Surface Science. 2009 ; Vol. 255, No. 6. pp. 3769-3772.

@article{dc6bc4ecdfa7454f9432b5d90dce6a8a,

title = " Structural properties of Al 2 O 3 dielectrics grown on TiN metal substrates by atomic layer deposition ",

abstract = " We investigated on the structural properties of Al 2 O 3 dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O 3 or H 2 O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al 2 O 3 dielectric films with the O 3 oxidant exhibit a rough morphology, a thick TiO 2 film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO 2 layer on the TiN substrate. This is due to the higher oxidation potential of the O 3 compared to the H 2 O.",

keywords = "Al O dielectrics, H O, O, TiN metal substrate, TiO",

author = "Hsieh, {Chun I.} and Pan, {Tung Ming} and Lin, {Jian Chyi} and Peng, {Yan Bo} and Huang, {Tsai Yu} and Wu, {Chang Rong} and Steven Shih",

year = "2009",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2008.10.048",

language = "英语",

volume = "255",

pages = "3769--3772",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "6",

}

Hsieh, CI, Pan, TM, Lin, JC, Peng, YB, Huang, TY, Wu, CR & Shih, S 2009, ' Structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates by atomic layer deposition ', Applied Surface Science, vol. 255, no. 6, pp. 3769-3772. https://doi.org/10.1016/j.apsusc.2008.10.048

Structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates by atomic layer deposition . / Hsieh, Chun I.; Pan, Tung Ming; Lin, Jian Chyi et al.
In: Applied Surface Science, Vol. 255, No. 6, 01.01.2009, p. 3769-3772.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Structural properties of Al 2 O 3 dielectrics grown on TiN metal substrates by atomic layer deposition

AU - Hsieh, Chun I.

AU - Pan, Tung Ming

AU - Lin, Jian Chyi

AU - Peng, Yan Bo

AU - Huang, Tsai Yu

AU - Wu, Chang Rong

AU - Shih, Steven

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We investigated on the structural properties of Al 2 O 3 dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O 3 or H 2 O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al 2 O 3 dielectric films with the O 3 oxidant exhibit a rough morphology, a thick TiO 2 film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO 2 layer on the TiN substrate. This is due to the higher oxidation potential of the O 3 compared to the H 2 O.

AB - We investigated on the structural properties of Al 2 O 3 dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O 3 or H 2 O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al 2 O 3 dielectric films with the O 3 oxidant exhibit a rough morphology, a thick TiO 2 film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO 2 layer on the TiN substrate. This is due to the higher oxidation potential of the O 3 compared to the H 2 O.

KW - Al O dielectrics

KW - H O

KW - O

KW - TiN metal substrate

KW - TiO

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SN - 0169-4332

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Hsieh CI, Pan TM, Lin JC, Peng YB, Huang TY, Wu CR et al. Structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates by atomic layer deposition Applied Surface Science. 2009 Jan 1;255(6):3769-3772. doi: 10.1016/j.apsusc.2008.10.048

Structural properties of Al ₂ O ₃ dielectrics grown on TiN metal substrates by atomic layer deposition

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